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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

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References

  1. Azize M, Bougrioua Z, Gibart P. Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates. J Cryst Growth, 2007, 299: 103–108

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  3. Ando Y, Makisako R, Takahashi H, et al. Dependence of electrical characteristics on epitaxial layer structure of AlGaN/GaN HEMTs fabricated on freestanding GaN substrates. IEEE Trans Electron Dev, 2021, 69: 88–95

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Acknowledgements

This work was supported by National Key R&D Program of China (Grant Nos. 2022YFB3605402, 2022YFB3604301, 2022YFB3605200) and National Natural Science Foundation of China (Grant No. 12274360).

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Authors and Affiliations

  1. School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China

    Xiao Wang & Yuan-Hang Sun

  2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, China

    Xiao Wang, Yuan-Hang Sun, Long Yue, Yu-Min Zhang, Jian-Feng Wang & Ke Xu

  3. Suzhou Nanowin Science and Technology Co., Ltd., Suzhou, 215123, China

    Yu-Min Zhang & Ke Xu

  4. Jiangsu Institute of Advanced Semiconductors, Suzhou, 215123, China

    Ke Xu

  5. Information Materials Research Department, Suzhou laboratory, Suzhou, 215128, China

    Zhi-Yu Lin

Authors
  1. Xiao Wang
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  2. Zhi-Yu Lin
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  3. Yuan-Hang Sun
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  4. Long Yue
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  5. Yu-Min Zhang
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  6. Jian-Feng Wang
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  7. Ke Xu
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Corresponding authors

Correspondence to Jian-Feng Wang or Ke Xu.

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Wang, X., Lin, ZY., Sun, YH. et al. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate. Sci. China Inf. Sci. 67, 169403 (2024). https://doi.org/10.1007/s11432-024-4003-y

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  • DOI: https://doi.org/10.1007/s11432-024-4003-y

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