Abstract
This paper presents fast and automated electromigration (EM) reliability modeling by using automated modeling generation (AMG) algorithm. The AMG converts human based EM modeling into an automated modeling and simulation process with the help of ANSYS parametric design language (APDL) program. For automating the neural model training process, training-driven adaptive sampling is applied to integrate data generation, data distributions determination, model structure adaptation, training and testing into a unified framework. Fully automated reliability model construction and simulation is achieved for the first time. This method effectively shortens the period of EM modeling by using dynamic sampling method. Furthermore, the heat generation from active devices has been considered to describe the heat effect on the interconnect reliability. Through the proposed technique, the allowable sizes, temperature and output power of a CMOS radio frequency power amplifier (RF PA) are derived to give reliability criteria for PA designer.
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Acknowledgements
This work was supported in part by the 863 Program of China (Contract No. 2015AA01A703) and the National Natural Science Foundation of China (Contract No. 61504092) and the Tianjin Research Program of Application Foundation and Advanced Technology (Contract No. 15JCQNJC01200).
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Gu, J., Fu, H., Na, W. et al. Fast and Automated Electromigration Analysis for CMOS RF PA Design. J Electron Test 33, 133–140 (2017). https://doi.org/10.1007/s10836-016-5639-4
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DOI: https://doi.org/10.1007/s10836-016-5639-4