Abstract
Temperature variation affects the refractive index of the material constitute an integrated optical loss which in turn, impacts the optical properties of the photonic device. After extensive literature survey, it is found that there is no accurate physical model available to calculate the variation of refractive index due to the change in temperature for InP/InGaAsP material except Weber’s model, which is an extension of Adachi’s Model. In this paper, it is demonstrated that the available models are not in good agreement with experimental data available in literature. Furthermore, an extension of modified single oscillator model is proposed which can be used to calculate the thermo-optic coefficient of InP/InGaAsP material.
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References
Fiedler, F., & Schlachetzki, A. (1987). Optical parameters of InP-based waveguides. Solid-State Electronics, 30(1), 73–83.
Smit, M., Leijtens, X., Ambrosius, H., Bente, E., Van der Tol, J., Smalbrugge, B., et al. (2014). An introduction to InP-based generic integration technology. Semiconductor Science and Technology, 29(8), 083001.
Weber, J. P. (1994). Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable bragg filters. IEEE Journal of Quantum Electronics, 30(8), 1801–1816.
Utaka, K., Kobayashi, K., & Suematsu, Y. (1981). Lasing characteristics of 1.5–1.6 \(\mu m\) GaInAsP/InP integrated twin-guide lasers with first-order distributed bragg reflectors. IEEE Journal of Quantum Electronics, 17(5), 651–658.
Pettit, G. D., & Turner, W. J. (1965). Refractive index of InP. Journal of Applied Physics, 36(6), 2081–2081.
Adachi, S. (1982). Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design. Journal of Applied Physics, 53(8), 5863–5869.
Kim, J. P., & Sarangan, A. M. (2007). Temperature-dependent sellmeier equation for the refractive index of \(Al_xGa_{1- x}As\). Optics Letters, 32(5), 536–538.
Gini, E., & Melchior, H. (1996). The refractive index of InP and its temperature dependence in the wavelength range from 1.2 \(\mu m\) to 1.6 \(\mu m\). Technical report, Institute of Electrical and Electronics Engineers, Piscataway, NJ (United States).
Gini, E., & Melchior, H. (1996). Thermal dependence of the refractive index of InP measured with integrated optical demultiplexer. Journal of Applied Physics, 79(8), 4335–4337.
Martin, P., Skouri, El M., Chusseau, L., Alibert, C., & Bissessur, H. (1995). Accurate refractive index measurements of doped and undoped InP by a grating coupling technique. Applied Physics Letters, 67(7), 881–883.
Della Corte, F. G., Cocorullo, G., Mario, I., & Ivo, R. (2000). Temperature dependence of the thermo-optic coefficient of InP, GaAs, and SiC from room temperature to 600 k at the wavelength of 1.5 μm. Applied Physics Letters, 77(11), 1614–1616.
Chandra, P., Coldren, L. A., & Strege, K. E. (1981). Refractive index data from from GaInAsP films. Electronic Letters, 17(1), 6–7.
Varshni, Y. P. (1967). Temperature dependence of the energy gap in semiconductors. Physica, 34(1), 149–154.
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Waqas, A., Melati, D., Mushtaq, Z. et al. An Improved Model to Predict the Temperature Dependence of Refractive Index of InP-based Compounds. Wireless Pers Commun 95, 607–615 (2017). https://doi.org/10.1007/s11277-016-3913-5
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DOI: https://doi.org/10.1007/s11277-016-3913-5