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Fully depleted SOI (FDSOI) technology

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Abstract

Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and ecosystem. We articulate that FDSOI is potential cornerstone for China to catch up and leapfrog in semiconductor technology.

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Authors and Affiliations

  1. IBM Research, 257 Fuller Road, Albany, NY, 12203, USA

    Kangguo Cheng

  2. Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA, 95054, USA

    Ali Khakifirooz

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  1. Kangguo Cheng
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Cheng, K., Khakifirooz, A. Fully depleted SOI (FDSOI) technology. Sci. China Inf. Sci. 59, 061402 (2016). https://doi.org/10.1007/s11432-016-5561-5

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