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Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection

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Abstract

A conventional diode-triggered silicon-controlled rectifier (DTSCR) structure with a layout strategy for electrostatic discharge (ESD) protection is presented and confirmed in a 65-nm CMOS technology. The modified device is featured by a scaled-down trigger-diode string, which shortens its turn-on time using a variable scaling factor. To confirm the parasitic resistance adjustments of the modified DTSCR, transmission line pulsing (TLP)/very fast transmission line pulsing (VF-TLP) tests and simulations are performed on the device. Compared to a conventional DTSCR, this structure exhibits an improved turn-on speed and robustness, which are suitable for I/O protection of ESD events in the nanosecond range, particularly the charged-device model (CDM) event.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant No. 61774005) and Beijing Natural Science Foundation (Grant No. 4162030).

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices and Circuits (MoE), Institute of Microelectronics, Peking University, Beijing, 100871, China

    Lizhong Zhang, Yuan Wang, Yize Wang, Xing Zhang & Yandong He

Authors
  1. Lizhong Zhang
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  2. Yuan Wang
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  3. Yize Wang
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  4. Xing Zhang
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  5. Yandong He
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Corresponding author

Correspondence to Yuan Wang.

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Zhang, L., Wang, Y., Wang, Y. et al. Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection. Sci. China Inf. Sci. 62, 62402 (2019). https://doi.org/10.1007/s11432-017-9427-1

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  • DOI: https://doi.org/10.1007/s11432-017-9427-1

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