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Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 11875223, 11805155, 11690043), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDA15015000), the Innovation Foundation of Radiation Application (Grant No. KFZC2018040201), and the Foundation of State Key Laboratory of China (Grant No. SKLIPR1803, 1610).

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Authors and Affiliations

  1. State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi’an, 710024, China

    Zujun Wang, Yuanyuan Xue, Wei Chen, Baoping He, Zhibin Yao, Minbo Liu, Jiangkun Sheng, Wuying Ma & Guantao Dong

  2. School of Materials Science and Engineering, Xiangtan University, Hunan, 411105, China

    Zujun Wang, Rui Xu & Hao Ning

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  1. Zujun Wang
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  2. Yuanyuan Xue
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  3. Wei Chen
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  9. Jiangkun Sheng
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  10. Wuying Ma
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  11. Guantao Dong
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Correspondence to Zujun Wang or Wei Chen.

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Wang, Z., Xue, Y., Chen, W. et al. Comparison of the dark signal degradation induced by Gamma ray, proton, and neutron radiation in pinned photodiode CMOS image sensors. Sci. China Inf. Sci. 62, 69403 (2019). https://doi.org/10.1007/s11432-018-9554-4

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  • DOI: https://doi.org/10.1007/s11432-018-9554-4

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