Skip to main content
SpringerLink
Log in

Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs

  • Letter
  • Published:
Science China Information Sciences Aims and scope Submit manuscript

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

References

  1. Doris B, Desalvo B, Cheng K, et al. Planarn Fully- Depleted-Silicon-On-Insulator technologies: toward the 28 nm node and beyond. Solid-State Electron, 2015, 117: 37–59

    Article  Google Scholar 

  2. Noel J P, Thomas O, Jaud MA, et al. Multi-VT UTBB FDSOI device architectures for low-power CMOS circuit. IEEE Trans Electron Dev, 2011, 58: 2473–2482

    Article  Google Scholar 

  3. Yin L X, Shen L, Jiang H, et al. Impact of self-heating effects on nanoscale Ge p-channel FinFETs with Si substrate. Sci China Inf Sci, 2018, 61: 062401

    Article  Google Scholar 

  4. Pop E, Sinha S, Goodson K E. Heat generation and transport in nanometer-scale transistors. Proc IEEE, 2006, 94: 1587–1601

    Article  Google Scholar 

  5. He P, Lin X, Jiang B, et al. Measurement and simulation of electrical and thermal property of drain and source on insulator MOSFETs (DSOI). In: Proceedings of IEEE International SOI Conference, Williamsburg, 2002. 55–57

    Google Scholar 

  6. Narayanan M R, Nashash H A. Minimization of selfheating in SOI MOSFET devices with SELBOX structure. In: Proceedings of International Conference on Advanced Semiconductor Devices & Microsystems, Smolenice, 2016. 61–64

    Google Scholar 

Download references

Acknowledgements

This work was supported by National Science and Technology Major Project (Grant No. 2016ZX02301003), National Natural Science Foundation of China (Grant Nos. 61574056, 61704056), Shanghai Sailing Program (Grant No. YF1404700), and Science and Technology Commission of Shanghai Municipality (Grant No. 14DZ2260800).

Author information

Authors and Affiliations

  1. Key Laboratory of Multidimensional Information Processing, Department of Electrical Engineering, East China Normal University, Shanghai, 200241, China

    Qin Huang, Renhua Liu, Yabin Sun, Xiaojin Li & Yanling Shi

  2. Shanghai Huali Microelectronics Corporation, Shanghai, 201203, China

    Changfeng Wang, Duanduan Liao & Ming Tian

Authors
  1. Qin Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Renhua Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Yabin Sun
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Xiaojin Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Yanling Shi
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Changfeng Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Duanduan Liao
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Ming Tian
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding authors

Correspondence to Yabin Sun or Xiaojin Li.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Huang, Q., Liu, R., Sun, Y. et al. Physical mechanism of performance adjustment in selective buried oxide n-MOSFETs. Sci. China Inf. Sci. 62, 69407 (2019). https://doi.org/10.1007/s11432-018-9791-2

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s11432-018-9791-2

Search

Navigation