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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Acknowledgements

This work was partly supported by National Key Research and Development Plan of China (Grant No. 2016YFA0200504), National Natural Science Foundation of China (Grant No. 61421005) and 111 Project (Grant No. B18001).

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China

    Gong Chen, Xiaokang Li, Xiaoyan Xu, Ru Huang & Ming Li

  2. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Peking University, Beijing, 100871, China

    Bocheng Yu & Zhihong Li

  3. Faculty of Information Technology, Beijing University of Technology, Beijing, 100124, China

    Xiaoqiao Dong

Authors
  1. Gong Chen
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  2. Bocheng Yu
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  3. Xiaokang Li
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  4. Xiaoqiao Dong
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  5. Xiaoyan Xu
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  6. Zhihong Li
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  7. Ru Huang
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  8. Ming Li
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Corresponding author

Correspondence to Ming Li.

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Chen, G., Yu, B., Li, X. et al. A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor. Sci. China Inf. Sci. 63, 169401 (2020). https://doi.org/10.1007/s11432-019-9842-3

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  • DOI: https://doi.org/10.1007/s11432-019-9842-3

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