Abstract
In this paper, the HfOx-based resistive random access memory (RRAM) devices with sub-100 nm pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage (1.97/0.7 V) and faster switching speed (⩽ 30 ns under 0.9 V pulse) as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition, the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application.
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Acknowledgements
This work was supported in part by National Key Research and Development Plan (Grant No. 2016YFA0200504), National Science and Technology Major Project (Grant No. 2017ZX02315001-004), National Natural Science Foundation of China (Grant No. 61421005), and 111 Project (Grant No. B18001).
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Li, X., Zhang, B., Wang, B. et al. Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields. Sci. China Inf. Sci. 62, 202401 (2019). https://doi.org/10.1007/s11432-019-9910-x
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DOI: https://doi.org/10.1007/s11432-019-9910-x