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Interface engineering of ferroelectric-gated MoS2 phototransistor

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Abstract

Two-dimensional (2D) layered materials have received significant attention owing to their unique crystal structures as well as outstanding optical and electric properties in photoelectric detection. However, most 2D materials are very sensitive to the environment. Adsorbates and traps introduced during the preparation process have a negative effect on the performance of devices based on these materials. Here, we focus on a molybdenum disulfide (MoS2) phototransistor gated by ferroelectrics, and insert a hexagonal boron nitride (h-BN) layer between MoS2 and the ferroelectric film to improve the interface. To clarify the role of h-BN in this device, two parallel devices are prepared on the same MoS2 flake. One device is covered with h-BN, while the other is in direct contact with the ferroelectric film. The electronic and optoelectronic properties of these two devices are then measured and compared. Experimental results reveal that, compared to device without h-BN, the MoS2 phototransistor with h-BN exhibits higher carrier mobility (average value: 85 cm2·V−1·s−1 and highest value: 185 cm2·V−1·s−1), larger responsivity (85 A·W−1), and larger detectivity (1.76 × 1013 Jones). Thus, this strategy is significant for the interface engineering and performance improvement of devices based on 2D materials.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61835012, 61905267, 61974153, 62025405), Projects of International Cooperation and Exchanges NSFC (Grant No. 62011530043), Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB44020100), Key Research Program of Frontier Sciences, CAS (Grant No. ZDBS-LY-JSC045), and Shanghai Sailing Program (Grant No. 19YF1454900).

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Authors and Affiliations

  1. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    Shuaiqin Wu, Xudong Wang, Wei Jiang, Luqi Tu, Yan Chen, Jingjing Liu, Tie Lin, Hong Shen, Jun Ge, Weida Hu, Xiangjian Meng, Jianlu Wang & Junhao Chu

  2. University of Chinese Academy of Sciences, Beijing, 100049, China

    Shuaiqin Wu, Wei Jiang & Luqi Tu

  3. Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China

    Jianlu Wang

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  1. Shuaiqin Wu
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  2. Xudong Wang
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  3. Wei Jiang
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  4. Luqi Tu
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  5. Yan Chen
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  9. Jun Ge
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  13. Junhao Chu
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Correspondence to Xudong Wang or Tie Lin.

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Wu, S., Wang, X., Jiang, W. et al. Interface engineering of ferroelectric-gated MoS2 phototransistor. Sci. China Inf. Sci. 64, 140407 (2021). https://doi.org/10.1007/s11432-020-3180-5

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  • DOI: https://doi.org/10.1007/s11432-020-3180-5

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