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Stateful implication logic based on perpendicular magnetic tunnel junctions

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Abstract

As the conventional von Neumann architecture meets critical limitations of data transfer bandwidth and energy consumption, perpendicular magnetic anisotropy magnetic tunnel junction based processing-in-memory paradigm attracts extensive attention as a promising substitute thanks to its non-volatility, low-power switching, fast access and infinite endurance. In this work, we propose and experimentally demonstrate a new spintronic implication logic gate that consists of two parallel perpendicular magnetic anisotropy magnetic tunnel junctions with different diameters. Material implication and furthermore NAND logic functions are implemented by all electrically-controlled operations. The reliability of this structure is verified, especially in sub-20 nm node, which shows great potential for large-density processing-in-memory applications.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61571023, 61627813), International Collaboration Project (Grant No. B16001), National Key Technology Program of China (Grant No. 2017ZX01032101), and Academic Excellence Foundation of BUAA for Ph.D. Students.

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Authors and Affiliations

  1. Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, 100191, China

    Wenlong Cai, Mengxing Wang, Kaihua Cao, Huaiwen Yang, Shouzhong Peng, Huisong Li & Weisheng Zhao

  2. Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao, 266104, China

    Huaiwen Yang & Weisheng Zhao

Authors
  1. Wenlong Cai
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  2. Mengxing Wang
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  3. Kaihua Cao
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  4. Huaiwen Yang
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  5. Shouzhong Peng
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  6. Huisong Li
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  7. Weisheng Zhao
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Corresponding authors

Correspondence to Kaihua Cao or Weisheng Zhao.

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Appendixes A and B. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Cai, W., Wang, M., Cao, K. et al. Stateful implication logic based on perpendicular magnetic tunnel junctions. Sci. China Inf. Sci. 65, 122406 (2022). https://doi.org/10.1007/s11432-020-3189-x

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  • DOI: https://doi.org/10.1007/s11432-020-3189-x

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