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Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling

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Conclusion

This study demonstrates the manipulation of the pinning direction in MTJs with varying tIrMn under the zero magnetic field cooling process, which results from the competition between the exchange bias coupling and interlayer coupling through the SAF layer. Our results clarify the coupling mechanism for determining the pinning direction of MTJs under the zero magnetic field cooling treatment, which can guide the design scheme of full Wheatstone bridge-based TMR sensors.

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References

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 11774199, 51871112, 51901008) and the 111 Project B13029.

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Correspondence to Kun Zhang, Shishen Yan or Qunwen Leng.

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Appendixes A–D. The supporting information is available online at info.scichina.com and link.springer.com. The supporting materials are published as submitted, without typesetting or editing. The responsibility for scientific accuracy and content remains entirely with the authors.

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Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling

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Chen, W., Yan, S., Cao, Z. et al. Magnetic coupling governed pinning directions in magnetic tunnel junctions under magnetic field annealing with zero magnetic field cooling. Sci. China Inf. Sci. 66, 149402 (2023). https://doi.org/10.1007/s11432-021-3467-5

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  • DOI: https://doi.org/10.1007/s11432-021-3467-5

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