Skip to main content
Log in

A Two-Level Power-Grid Model for Transient Current Testing Evaluation

  • Published:
Journal of Electronic Testing Aims and scope Submit manuscript

Abstract

We evaluate the possibilities of transient current testing practical implementation by comparing the transient supply current signature at the IC supply pins to its internal behavior. This analysis is key to correlate the internal circuit block transient current shape to the waveform measured outside the IC. These waveforms may differ significantly due to the power supply grid, whose capacitive and inductive components can modify both the frequency and magnitude components of the transient current. Given the complexity of today ICs, an accurate description of the circuit power grid is required to investigate the merits of transient current testing (idd(t)) approaches. In this work we develop and analyze a hierarchical power-grid equivalent circuit to evaluate the supply current frequency components and their distribution over the power/ground grid hierarchy. This is a key step to determine the feasibility of on-chip vs. off-chip idd(t) strategies and their posterior application to on-line testing.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. B. Alorda, B. Bloechel, A. Keshavarzi, and J. Segura, “An Off-chip Sensor Circuit for Transient Current Testing,” in Proc. IEEE European Test Workshop, 2002, pp. 81–86.

  2. B. Alorda, M. Rosales, J. Soden, C. Hawkins, and J. Segura, “Charge Based Transient Current Testing (CBT) for Submicron CMOS SRAMs,” in Proc. IEEE Int. Test Conf. (ITC02), 2002, pp. 947–953.

  3. J. Argüelles, M. Martínez, and S. Bracho, “Dynamic Idd Test for Mixed Signal ICs” Electronic Letters 17th March 1994, vol. 30, no. 6.

  4. S. Bobba, T. Thorp, K. Aingaran, and D. Liu “IC Power Distribution Challenges,” in Proc. IEEE VLSI Test Symposium (VTS01), 2001, pp. 643–650.

  5. S. Bodapati and F.N. Najm, “Frequency-Domain Supply Current Macro-Model,” in Proc. Inter. Symp. on Low power Electronics and Design (ISLPED01), 2001, pp. 295–298.

  6. A. Bogliolo and L. Benini, “Node Sampling: A Robust rtl Power Modeling Approach,” in Proc. Inter. Conf. on Computer-Aided Design (ICCAD98), 1998, pp. 461–467.

  7. S. Boyd, L. Vandenberghe, A. El Gamal, and S. Yun, “Design a Robust Global Power and Ground Networks,” in Proc. International Symposium on Physical Design (ISPD01), 2001, pp. 60–65.

  8. E.I. Cole, J.M. Soden, P. Tangyunyong, P.L. Candelaria, R.W. Beegle, D.L. Barton, C.L. Henderson, and C.F. Hawkins, “Transient Power Supply Voltage (vddt) Analysis for Detecting IC Defects,” in Proc. IEEE Int. Test Conf. (ITC97), 1997, pp. 23–31.

  9. I. de Paúl, M. Rosales, B. Alorda, J. Segura, C. Hawkins, and J. Soden, “Defect Oriented Fault Diagnosis for Semiconductor Memories Using Charge Analysis: Theory and Experiments,” in Proc. IEEE VLSI Test Symp. (VTS01), 2001.

  10. K. Gala, D. Blaauw, J. Wang, V. Zolotov, and M. Zhao, “Inductance 101: Analysis and Design Issues,” in Design Automation Conference (DAC01), 2001.

  11. A. Germida, Z. Yan, J.F. Plusquellic, and F. Muradali, “Defect Detection Using Power Supply Transient Signal Analysis,” in Proc. IEEE Int. Test Conf. (ITC99), 1999, pp. 67–76.

  12. S. Gupta and F.N. Najm, “Power Macromodeling for High Level Power Estimation,” in Proc. 34th ACM/IEEE Design Automation Conference, 1997, pp. 365–370.

  13. S. Gupta and F.N. Najm, “Energy-Per-Cycle Estimation at RTL,” in Proc. Inter. Symp. on Low power Electronics and Design (ISLPED99), 1999, pp. 121–126.

  14. W. Jiang and B. Vinnakota, “Statistical Threshold Formulation for Dynamic Idd Test,” in IEEE Transactions on computer-aided design of integrated circuits and systems, vol. 21, no. 6, pp. 694–705, June 2002.

    Google Scholar 

  15. H.-S. Kim, D.-H. Yoon, and S. Kang, “SRAM Transparent Testing Methodology Using Dynamic Power Supply Current,” in IEE Proc. Circuits Devices Systems, vol. 148, no. 4, Aug. 2001.

  16. B. Kruseman, P. Janssen, and V. Zieren, “Transient Current Testing of 0.25 µm CMOS Devices,” in Proc. IEEE Int. Test Conf. (ITC99), 1999, pp. 47–56.

  17. B. Kruseman, P. Janssen, and V. Zieren, “Transient Current Testing of 0.25 µm CMOS Devices,” in Proc. IEEE Int. Test Conf. (ITC99), 1999, pp. 47–56.

  18. P.E. Landman and J.M. Rabaey, “Architectural Power Analysis: The Dual Bit Type Method,” IEEE Trans. on VLSI Systems, vol. 3, pp. 173–187, 1995.

    Google Scholar 

  19. Y. Lechuga, R. Mozuelos, M. Martínez, and S. Bracho “Built-in Dynamic Current Sensor for Hard-to-Detect Faults in Mixed-Signal Ics,” in Proc. Design, Automation and Test in Europe (DATE02), 2002, pp. 205–211

  20. J. Liu, R. Makki, and A. Kayssi, “Dynamic Power Supply Current Testing of CMOS SRAMs,” in Proc. Asian Test Symposium (ATS98), 1998.

  21. J. Liu, R.Z. Maki, and A. Kayssi, “Dynamic Power Supply Current Testing of CMOS SRAMs,” in Proc. 7th Asian Test Symp., 1998.

  22. Y. Maidon, Y. Deval, and J.B. Begueret, “An Improved CMOS BICS for On-Line Testing,” in Proc. IEEE International On-Line Testing Workshop, 2000.

  23. R. Panda, D. Blaauw, R. Chaudhry, V. Zolotov, B. Young, and R. Ramaraju, “Model and Analysis for Combined Package and On-Chip Power Grid Simulation,” in Proc. Inter. Symp. on Low power Electronics and Design (ISLPED00), 2000, pp. 179–184.

  24. I. Pecuh, M. Margala, and V. Stopjakova, “1.5 Volts Iddq/Iddt Current Monitor,” in Proceedings of the 1999 IEEE Canadian Conference on Electrical and Computer Engineering, pp. 472–476.

  25. R. Picos, M. Roca, E. Isern, E. Garcia, and J. Segura, “Design of an On Chip Dynamic Current Sensor Based on Charge Evaluation,” in Proc. IEEE European Test Workshop, 1998, pp. 195–196.

  26. S.R. Powell and P.M. Chau, “Estimating Power Dissipation of VLSI Signal Processing Chips: The PFA Technique,” VLSI Signal Processing IV, 1990, pp. 250–259.

  27. A. Raghunathan, S. Dey, and N.K. Jha, “Register-Transfer Level Estimation Techniques for Switching Activity and Power Consumption,” in Proc. Inter. Conf. on Computer-Aided Design (ICCAD96), 1996, pp. 158–165.

  28. J.L. Rosselló and J. Segura, “An Analytical Charge-Based Compact Delay Model for Submicron CMOS Inverters,” IEEE Transactions on Circuits and Systems I, to be published.

  29. S.S. Sapatnekar and H. Su, “Analysis and Optimization of Power Grids,” in IEEE Design & Test of Computer, vol. 20, no. 3, May–June 2003.

  30. V. Stopjakova, H. Manhaeve, and M. Sidiropulos, “On-Chip Transient Current Monitor for Testing of Low-Voltage CMOS IC,” in Proc. Design, Automation and Test in Europe Conference and Exhibition, 1999.

  31. M. Zhao, R.V. Panda, S.S. Sapatnekar, and D. Blaauw, “Hierarchical Analysis of Power Distribution Networks,” IEEE Transactions on Computer-aided design of ICs and Systems, vol. 21, no. 2, Feb. 2002.

  32. S. Zhao, K. Roy, and C. Koh, “Decoupling Capacitance Allocation for Power Supply Noise Suppression,” in Proc. (ISPD01), 2001, pp. 66–71.

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Alorda, B., Canals, V. & Segura, J. A Two-Level Power-Grid Model for Transient Current Testing Evaluation. Journal of Electronic Testing 20, 543–552 (2004). https://doi.org/10.1023/B:JETT.0000042518.15795.f0

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1023/B:JETT.0000042518.15795.f0

Navigation