The drive to improve digital memory through ever-shrinking electronic circuitry will ultimately face a bottleneck. Researchers propose exploiting the room 'inside' memory elements as a solution.
This is a preview of subscription content, access via your institution
Access options
Subscribe to this journal
Receive 51 print issues and online access
$199.00 per year
only $3.90 per issue
Buy this article
- Purchase on SpringerLink
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
References
Hilbert, M. & López, P. Science 332, 60–65 (2011).
Lee, D. et al. Adv. Mater. 24, 402–406 (2012).
Goldman, M. & Pangal, K. 3rd IEEE Int. Memory Workshop http://dx.doi.org/10.1109/IMW.2011.5873197 (2011).
Fujisaki, Y. Jpn. J. Appl. Phys. 49, 100001-1–100001-14 (2010).
Shiga, H. et al. IEEE J. Solid-state Circuits 45, 142–152 (2010).
Das, S. & Appenzeller, J. Nano Lett. 11, 4003–4007 (2011).
Chanthbouala, A. et al. Nature Nanotechnol. 7, 101–104 (2011).
Choi, T., Lee, S., Choi, Y. J., Kiryukhin, V. & Cheong, S.-W. Science 324, 63–66 (2009).
Author information
Authors and Affiliations
Corresponding authors
Rights and permissions
About this article
Cite this article
Garcia, V., Bibes, M. Inside story of ferroelectric memories. Nature 483, 279–280 (2012). https://doi.org/10.1038/483279a
Published:
Issue Date:
DOI: https://doi.org/10.1038/483279a
