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Modeling of radiation sensitivity of hydrogen sensors based on MISFET

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Abstract

The paper presents the electrophysical and electrical models of hydrogen and radiation sensitivities of the integrated sensors with MISFET sensing elements based on the structure Pd–Ta2O5–SiO2–Si. The models take into account the influence of electrical circuits and modes, chip temperatures, surface-state density and radiation parameters on the hydrogen sensitivity of the sensors.

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Authors and Affiliations

  1. National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute), Moscow, Russia

    B. I. Podlepetsky

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  1. B. I. Podlepetsky
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Correspondence to B. I. Podlepetsky.

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Original Russian Text © B.I. Podlepetsky, 2015, published in Datchiki i Sistemy, 2015, No. 1, pp. 60–71.

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Podlepetsky, B.I. Modeling of radiation sensitivity of hydrogen sensors based on MISFET. Autom Remote Control 77, 1301–1315 (2016). https://doi.org/10.1134/S0005117916070171

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  • DOI: https://doi.org/10.1134/S0005117916070171

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