Abstract
The technique of estimating the parameters models of MISTs (the field-effect transistors with metal-insulator-semiconductor structures) is proposed to predict the radiation sensitivity of the sensors based on MISTs. The technique allows distinguishing the contributions of charges in the insulator and the surface states, taking into account the effect of irradiation modes on the transistor characteristics.
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Original Russian Text © B.I. Podlepetsky, A.S. Bakerenkov, Yu.V. Sukhoroslova, 2016, published in Datchiki i Sistemy, 2016, No. 4, pp. 64–69.
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Podlepetsky, B.I., Bakerenkov, A.S. & Sukhoroslova, Y.V. Radiation Sensitivity Modeling Technique of Sensors’ Mis-Transistor Elements. Autom Remote Control 79, 180–189 (2018). https://doi.org/10.1134/S0005117918010150
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DOI: https://doi.org/10.1134/S0005117918010150