Skip to main content
SpringerLink
Log in

Accuracy Errors of Modeling of MIS-Transistor Sensor Elements

  • sensors and systems
  • Published:
Automation and Remote Control Aims and scope Submit manuscript

Abstract

Assesses the accuracy characteristics of circuits’, electrical and electrophysical models of MISFET transistor elements of the sensors, taking into account the errors arising from simplifying assumptions, approximations, extrapolations and experimental dispersions’ characteristics in determining the parameters of the models and measured physical quantity.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12

Similar content being viewed by others

References

  1. Podlepetsky, B. I. Sensitive Elements of Sensors Based on Transistors with Structure Electrode–Insulator–Semiconductor. Datch. Sist. no. 3, 66–77 (2010).

    Google Scholar 

  2. Denisenko, V. V. Kompaktnye modeli MOP-tranzistorov dlya SPICE v mikro- i nanoelektronike (Compact Models of MOSFETs for SPICE in Micro- and Nanoelectronics). (FIZMATLIT, Moscow, 2010).

    Google Scholar 

  3. Zebrev, G. I. Fizicheskiye osnovy kremnievoi nanoelektroniki (Physical basics of silicon nanoelectronics). (BINOM, Moscow, 2011).

    Google Scholar 

  4. Gildenblat, G., Hailing, W., Ten-Lon, C., Xin, G. & Xiaowen, C. An Advanced Surface-Potential-Based Compact MOSFET Model. IEEE J.Solid-State Circ. 39, 1394–1406 (2004).

    Article  Google Scholar 

  5. Podlepetsky, B. I. Integrated Hydrogen Sensors Based on MIS Transistor Sensitive Elements: Modeling of Characteristics. Autom. Remote Control 75(no. 12), 345–358 (2015). https://doi.org/10.1134/ S0005117915030170.

    MATH  Google Scholar 

  6. Barnaby, H. J., McLain, M. L., Esqueda, I. S. & Chen, X. J. Modeling Ionizing Radiation Effects in Solid State Materials and CMOS Devices. IEEE Trans. Circuits Syst. I, Reg. Papers 56(no. 8), 1870–1883 (2009).

    Article  MathSciNet  Google Scholar 

  7. Esqueda, I. S., Barnaby, H. J. & King, M. P. Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies. IEEE Trans. Nucl. Sci. 62(no. 4), 1501–1515 (2015).

    Article  Google Scholar 

  8. Podlepetsky, B. I. Modeling of Radiation Sensitivity of Hydrogen Sensors Based on MISFET. Autom. Remote Control 77(no.7), 1301–1315 (2016). https://doi.org/10.1134/S0005117916070171.

    Article  Google Scholar 

  9. Nicollian, E. H. & Goetzberger, A. The SiO2-Si Interface–Electrical Properties as Determined by the MIS Conductance Technique. Bell Sist. Tech. J. no. 46, 1055 (1967).

    Article  Google Scholar 

  10. Podlepetsky, B. I., Kovalenko, A. V. & Nikiforova, M. Y. Estimation of Errors of Integrated Hydrogen Sensors Based on MIS-Transistor Sensing Elements. Datch. Sist. no. 1, 2–7 (2010).

    Google Scholar 

  11. Podlepetsky, B. I., Bakerenkov, A. S. & Sukhoroslova, Yu. V. Radiation Sensitivity Modeling Technique of Sensors’ MIS-Transistor Elements. Autom. Remote Control 79(no. 1), 180–189 (2018). https://doi.org/10/1134/S0005117918010150.

    Article  Google Scholar 

  12. Anashin, V. S. Sensors for Space Dosimetric Systems. Datch. Sist. no. 6, 11–15 (2009).

    Google Scholar 

  13. Bakerenkov, A. S., Podlepetsky, B. I., Felitsyn, V. A., Pershenkov, V. S. & Rodin, A. S. Digital Total Ionizing Dose Sensor Based on the Commercial MOSFET. Datch. Sist. no. 2, 31–36 (2018).

    Google Scholar 

  14. Podlepetsky, B., Nikiforova, M. & Kovalenko, A. Performance Degradations of MISFET-Based Hydrogen Sensors with Pd-Ta2O5-SiO2-Si Structure at Long-Time Operation. Proceedings 2(13), 777 (2018). https://doi.org/10.3390/proceedings2130777.

    Article  Google Scholar 

  15. Podlepetsky, B., Kovalenko, A. & Nikiforova, M. Influence of Electrical Modes on Radiation Sensitivity of Hydrogen Sensors Based on Pd-Ta2O5-SiO2-Si Structures. Sensors Actuators B: Chemical 273(no. 10), 999–1007 (2018). https://doi.org/10.1016/j.snb.2018.06.107.

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. National Research Nuclear University “MEPhI,”, Moscow, Russia

    B. I. Podlepetsky

Authors
  1. B. I. Podlepetsky
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Podlepetsky, B. Accuracy Errors of Modeling of MIS-Transistor Sensor Elements. Autom Remote Control 81, 1911–1928 (2020). https://doi.org/10.1134/S0005117920100094

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S0005117920100094

Keywords

Search

Navigation