Abstract
Sputtering is characterized by a sputtering yield ratio which depends on several conditions, in particular the incident ions energy to the cathode, in normal incidence and when considers the angle α of the incident ions. Our investigations may be considered in first step to calculate the sputtering yield of three metals: copper, silver, and aluminum collide with argon, xenon, oxygen and nitrogen ions using highly developed software called SRIM (Stopping and Range of Ions in Matter) with normal incidence, then with varied angles in future works. The results obtained are compared with those obtained using the analytical models based on the Monte Carlo method proposed by researchers as Sigmund and Yamamaura in order to validate models.
Abdelkader Bouazza wishes to thank his colleagues in the Electrical Engineering Department and Plasma Laboratory for their valuable assistance throughout this work.
References
1 J. Bohdansky, A universal relation for the sputtering yield of monatomic solids at normal ion incidence, Nuclear Instruments Methods Phys. Res. 2 (1984), 1–3, 587–591. 10.1016/0168-583X(84)90271-4Search in Google Scholar
2 D. Depla and W. P. Leroy, Magnetron sputter deposition as visualized by Monte Carlo modeling, Thin Solid Films 520 (2012), 6337–6354. 10.1016/j.tsf.2012.06.032Search in Google Scholar
3 B. O. Duchemin, An Investigation of Ion Engine Erosion by Low Energy, California Institute of Technology, Pasadena, 1995. Search in Google Scholar
4 S. Mahieu, Biaxial Alignment in Sputter Deposited thin Films, Faculteit Wetenschappen, Leuven, 2006. 10.1016/j.tsf.2006.06.027Search in Google Scholar
5 N. Matsunami, Y. Yamamura, Y. Itikawa, N. Itoh, Y. Kazumata, S. Miyagawa, K. Morita, R. Shimizu and H. Tawara, Energy dependence of the ion induced sputtering yield of monoatomic, At. Data Nuclear Table 31 (1984), 1, 1–80. 10.1016/0092-640X(84)90016-0Search in Google Scholar
6 K. Meyer, I. K. Schuller and C. M. Falco, Thermalization of sputtered atoms, J. Appl. Phys. 52 (1981), 5803–5805. 10.1063/1.329473Search in Google Scholar
7 R. Parsons, Sputter deposition processes, Thin Film Processes II, Academic Press, San Diego (1991), 177–204. 10.1016/B978-0-08-052421-4.50009-5Search in Google Scholar
8 D. Piscitelli, Simulation de la pulvérisation cathodique dans les écrans à plasma, PhD thesis, Université Paul Sabatier U.F.R. Physique Chimie Automatique, Toulouse, 2002. Search in Google Scholar
9 M. Saraiva, Sputter deposition of MgO thin films: The effect of cation substitution, PhD thesis, Universiteit Gent Faculteit Wetenschappen, Gent, 2012. Search in Google Scholar
10 A. Settaouti and L. Settaouti, Simulation of the transport of sputtered atoms and effects of processing conditions, Appl. Surface Sci. 254 (2008), 18, 5750–5756. 10.1016/j.apsusc.2008.03.042Search in Google Scholar
11 P. Sigmund, Sputtering by ion bombardment theoretical concepts, Sputtering by particle bombardment I, Topics Appl. Phys. 47, Springer, Berlin (1981), 9–71. 10.1007/3540105212_7Search in Google Scholar
12 K. Wasa and S. Hayakawa, Handbook of Sputter Deposition Technology, Noyes Publications, Saddle River, 1992. Search in Google Scholar
13 H. F. Winters and P. Sigmund, Sputtering of chemisorbed gas (nitrogen on tungsten) by low energy ions, J. Appl. Phys. 45 (1974), 4760–4760. 10.1063/1.1663131Search in Google Scholar
14 Y. Yamamura and M. Ishida, Monte-Carlo simulation of the thermalization of the sputtered atoms and reflected atoms in the magnetron sputtering discharge, J. Vac. Sci. Technol. A 13 (1995), 1, 101–112. 10.1116/1.579874Search in Google Scholar
15 Y. Yamamura and H. Tawara, Energy dependence of ion-induced sputtering yields from monatomic solids at normal incidence, At. Data Nuclear Data Tables 62 (1996), 2, 149–253. 10.1006/adnd.1996.0005Search in Google Scholar
16 The stopping and range of ions in matter, 2013, http://www.srim.org. Search in Google Scholar
© 2016 by De Gruyter
