Abstract
The energy and the angular distribution of atoms are considered like two parameters most influent in the optimization of the sputtering and subsequently on the deposit, resulting in films having the desired properties (homogeneity in thickness, composition identical to that of the evaporated material). Moreover, a great influence on the shape and quality of thin films is obtained. In this work, a simulation with a Monte Carlo (MC) method is used to calculate the sputtering yield for different energies and angular distributions of atoms of metals (Cu, Al and Ag) and semiconductors (Ge, Si and Te) bombarded by different gas particles (Ar, Xe and Ne). Our results showed that when arriving at a certain energy value
Acknowledgements
The author wishes to thank his colleagues in the Electrical engineering Department and plasma laboratory for their valuable assistance throughout this work.
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