Abstract
The future of the industry development depends greatly on the permanently ensured energy needs and can be achieved only through the use of a variety of sustainable energy sources where the solar energy, which gains its optimal exploitation directly by linking it to the properties of solar cells and in particular to the crystallographic quality of the used semiconductor substrates, is one of them. Many growth processes are used to obtain a high quality of semiconductor formation and deposition, among them the DC sputtering. In this work, based on the Monte-Carlo method, a 3D DC sputtering simulation of the
References
[1] H. S. Ahn, T. E. Kim, E. Cho, M. Ji, C. K. Lee, S. Han, Y. Cho and C. Kim, Molecular dynamics study on low-energy sputtering properties of MgO surfaces, J. Appl. Phys. 103 (2008), Article ID 073518. 10.1063/1.2899182Search in Google Scholar
[2] A. C. Badgujar, S. R. Dhage and S. V. Joshi, Process parameter impact on properties of sputtered large-area Mo bilayers for CIGS thin film solar cell applications, Thin Solid Films 589 (2015), 79–84. 10.1016/j.tsf.2015.04.046Search in Google Scholar
[3] G. Betz and K. Wien, Energy and angular distributions of sputtered particles, Int. J. Mass Spectr. Ion Processes 140 (1994), no. 3, 1–110. 10.1016/0168-1176(94)04052-4Search in Google Scholar
[4] A. Bouazza and A. Settaouti, Monte Carlo simulation of the influence of pressure and target-substrate distance on the sputtering process for metal and semiconductor layers, Modern Phys. Lett. B 30 (2016), no. 20, Article ID 1650253. 10.1142/S0217984916502535Search in Google Scholar
[5] A. Bouazza and A. Settaouti, Study and simulation of the sputtering process of material layers in plasma, Monte Carlo Methods Appl. 22 (2016), no. 2, 149–159. 10.1515/mcma-2016-0106Search in Google Scholar
[6] A. Bouazza and A. Settaouti, Understanding the contribution of energy and angular distribution in the morphology of thin films using Monte Carlo simulation, Monte Carlo Methods Appl. 24 (2018), no. 3, 215–224. 10.1515/mcma-2018-0019Search in Google Scholar
[7] A. Drize and A. Settaouti, Three-dimensional Monte Carlo simulations of materials on the physical deposition process, Modern Phys. Lett. B 31 (2017), no. 24, Article ID 1750165. 10.1142/S0217984917501652Search in Google Scholar
[8] A. Drize and A. Settaouti, Physical investigation of copper thin film prepared by sputtering, Indian J. Pure Appl. Phys. 56 (2018), no. 6, 434–439. Search in Google Scholar
[9]
K. S. Gour, A. K. Yadav, O. P. Singh and V. N. Singh,
Na incorporated improved properties of
[10] D. Guping, X. Tingwen and L. Yun, Preferential sputtering of Ar ion processing SiO2 mirror, Proc. SPIE 8416L (2012), 10.1117/12.973697. 10.1117/12.973697Search in Google Scholar
[11] G. Hobler, R. M. Bradley and H. M. Urbassek, Probing the limitations of Sigmund’s model of spatially resolved sputtering using Monte Carlo simulations, Phys. Rev. B 93 (2016), Article ID 205443. 10.1103/PhysRevB.93.205443Search in Google Scholar
[12] H. Hofsäss, K. Zhang and A. Mutzke, Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM, Appl. Surf. Sci. 310 (2014), 134–141. 10.1016/j.apsusc.2014.03.152Search in Google Scholar
[13] S. Ishihara, Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using(t-C4H9)2S2, Jpn. J. Appl. Phys. 55 (2016), 10.7567/JJAP.55.06GF01. 10.7567/JJAP.55.06GF01Search in Google Scholar
[14]
Y. P. Lin, Y. F. Chi, T. E. Hsieh, Y. C. Chen and K. P. Huang,
Preparation of Cu2ZnSnS4 (
[15] J. Muñoz-García, Self-organized nanopatterning of silicon surfaces by ion beam sputtering, Mater. Sci. Eng. R Rep. 86 (2014), 10.1016/j.mser.2014.09.001. 10.1016/j.mser.2014.09.001Search in Google Scholar
[16]
M. Nakamura, K. Yamaguchi, Y. Kimoto, Y. Yasaki, T. Kato and H. Sugimoto,
Cd-Free Cu(In, Ga)(Se, S)2 thin film solar cell with record efficiency of
[17] H. Paul, Nuclear stopping power and its impact on the determination of electronic stopping power, AIP Conference Proc. 1525 (2013), 10.1063/1.4802339. 10.1063/1.4802339Search in Google Scholar
[18] V. I. Shulga, Note on the artefacts in SRIM simulation of sputtering, Appl. Surf. Sci. 439 (2018), 456–461. 10.1016/j.apsusc.2018.01.039Search in Google Scholar
[19] A. L. Stepanov, V. V. Vorobev, A. M. Rogov, V. I. Nuzhdin and V. F. Valeev, Sputtering of silicon surface by silver-ion implantation, Nucl. Instruments Methods Phys. Res. Sect. B Beam Interact. Mater. Atoms 457 (2019), 10.1016/j.nimb.2019.07.020. 10.1016/j.nimb.2019.07.020Search in Google Scholar
[20] P. S. Szabo, Solar wind sputtering of wollastonite as a lunar analogue material - Comparisons between experiments and simulations, Icarus 314 (2018), 98–105. 10.1016/j.icarus.2018.05.028Search in Google Scholar
[21] M. Valentini, Fabrication of monolithic CZTS/Si tandem cells by development of the intermediate connection, Sol. Energy 190 (2019), 414–419. 10.1016/j.solener.2019.08.029Search in Google Scholar
[22] H. Wender, P. Migowski, A. F. Feil, S. R. Teixeira and J. Dupont, Sputtering deposition of nanoparticles onto liquid substrates: Recent advances and future trends, Coord. Chem. Rev. 257 (2013), no. 17–18, 2468–2483. 10.1016/j.ccr.2013.01.013Search in Google Scholar
[23] L. Zhang, The effects of annealing temperature on CIGS solar cells by sputtering from quaternary target with Se-free post annealing, Appl. Surf. Sci. 413 (2017), 175–180. 10.1016/j.apsusc.2017.03.289Search in Google Scholar
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