Skip to main content
Log in

Initial-condition-switched boosting extreme multistability and mechanism analysis in a memcapacitive oscillator

忆容振荡器初值切换调控的超级多稳定性及其机理分析

  • Research Article
  • Published:
Frontiers of Information Technology & Electronic Engineering Aims and scope Submit manuscript

Abstract

Extreme multistability has seized scientists’ attention due to its rich diversity of dynamical behaviors and great flexibility in engineering applications. In this paper, a four-dimensional (4D) memcapacitive oscillator is built using four linear circuit elements and one nonlinear charge-controlled memcapacitor with a cosine inverse memcapacitance. The 4D memcapacitive oscillator possesses a line equilibrium set, and its stability periodically evolves with the initial condition of the memcapacitor. The 4D memcapacitive oscillator exhibits initial-condition-switched boosting extreme multistability due to the periodically evolving stability. Complex dynamical behaviors of period doubling/halving bifurcations, chaos crisis, and initial-condition-switched coexisting attractors are revealed by bifurcation diagrams, Lyapunov exponents, and phase portraits. Thereafter, a reconstructed system is derived via integral transformation to reveal the forming mechanism of the initial-condition-switched boosting extreme multistability in the memcapacitive oscillator. Finally, an implementation circuit is designed for the reconstructed system, and Power SIMulation (PSIM) simulations are executed to confirm the validity of the numerical analysis.

摘要

超级多稳定性以其丰富多样的动力学状态和工程应用中的极大灵活性受到科学家们关注. 利用 4 个线性电路元件和一个具有余弦逆忆容值的非线性荷控型忆容元件, 构造了一个四维忆容振荡器. 四维忆容振荡器具有一个线平衡集, 其稳定性随忆容的初始条件周期性演化. 由于周期性演化的稳定性, 四维忆容振荡器展现了初值切换调控的超级多稳定性. 通过分岔图、 李雅普诺夫指数和相轨图, 揭示了周期倍增/减半分岔、 混沌危机和初值切换共存吸引子的复杂动力学行为. 在此基础上, 通过积分变换得到一个重构系统, 揭示了忆容振荡器中初值切换调控超级多稳定性的形成机理. 最后设计了重构系统的实现电路, 并进行了 PSIM 电路仿真, 验证了数值分析的有效性.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

Download references

Author information

Authors and Affiliations

Authors

Contributions

Bocheng BAO designed the research. Bei CHEN and Quan XU processed the data. Bei CHEN drafted the paper. Quan XU and Mo CHEN helped organize the paper. Huagan WU and Bocheng BAO revised and finalized the paper.

Corresponding author

Correspondence to Bocheng Bao  (包伯成).

Ethics declarations

Bei CHEN, Quan XU, Mo CHEN, Huagan WU, and Bocheng BAO declare that they have no conflict of interest.

Additional information

Project supported by the National Natural Science Foundation of China (Nos. 51777016 and 61801054), the Natural Science Foundation of Jiangsu Province, China (No. BK20191451), the Natural Science Foundation of Changzhou, Jiangsu Province, China (No. CJ20190037), and the Open Research Fund of Key Laboratory of MEMS of Ministry of Education, Southeast University, China

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Chen, B., Xu, Q., Chen, M. et al. Initial-condition-switched boosting extreme multistability and mechanism analysis in a memcapacitive oscillator. Front Inform Technol Electron Eng 22, 1517–1531 (2021). https://doi.org/10.1631/FITEE.2000622

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1631/FITEE.2000622

Key words

关键词

CLC number

Navigation