Abstract
Carbon nanotube field-effect transistors (CNTFETs) are reliable alternatives for conventional transistors, especially for use in approximate computing (AC) based error-resilient digital circuits. In this paper, CNTFET technology and the gate diffusion input (GDI) technique are merged, and three new AC-based full adders (FAs) are presented with 6, 6, and 8 transistors, separately. The nondominated sorting based genetic algorithm II (NSGA-II) is used to attain the optimal performance of the proposed cells by considering the number of tubes and chirality vectors as its variables. The results confirm the circuits’ improvement by about 50% in terms of power-delay-product (PDP) at the cost of area occupation. The Monte Carlo method (MCM) and 32-nm CNTFET technology are used to evaluate the lithographic variations and the stability of the proposed circuits during the fabrication process, in which the higher stability of the proposed circuits compared to those in the literature is observed. The dynamic threshold (DT) technique in the transistors of the proposed circuits amends the possible voltage drop at the outputs. Circuitry performance and error metrics of the proposed circuits nominate them for the least significant bit (LSB) parts of more complex arithmetic circuits such as multipliers.
摘要
碳纳米管场效应晶体管(CNTFET)可替代传统晶体管, 尤其在基于近似计算的容错数字电路中。本文结合CNTFET技术和栅极扩散输入(GDI)技术, 提出3种分别具有6、6和8个晶体管的基于近似计算的全加器。采用基于非支配排序的遗传算法II, 将管数和手性向量作为变量, 对所提单元进行性能寻优。结果表明, 在电路面积有所增加的情况下, 功耗延时积性能指标提升约50%。采用蒙特卡罗方法(MCM)和32 nm CNTFET技术, 评估所提电路在制造过程中的工艺偏差和稳定性。与文献中的方法相比, 所提电路具有更高稳定性。在电路晶体管中使用的动态阈值技术修正了可能出现的输出压降。所提电路出色的电路性能和差错率使其可以作为复杂算术电路(如乘法器)的最低有效位(LSB)部分。
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Ayoub SADEGHI designed the research. Razieh GHASEMI and Hossein GHASEMIAN processed the data. Ayoub SADEGHI and Hossein GHASEMIAN drafted the paper. Hossein GHASEMIAN and Nabiollah SHIRI supervised the study and revised and finalized the paper.
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Ayoub SADEGHI, Razieh GHASEMI, Hossein GHASEMIAN, and Nabiollah SHIRI declare that they have no conflict of interest.
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The data that support the findings of this study are available from the corresponding author upon reasonable request.
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Sadeghi, A., Ghasemi, R., Ghasemian, H. et al. Efficient and optimized approximate GDI full adders based on dynamic threshold CNTFETs for specific least significant bits. Front Inform Technol Electron Eng 24, 599–616 (2023). https://doi.org/10.1631/FITEE.2200077
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DOI: https://doi.org/10.1631/FITEE.2200077
Key words
- Carbon nanotube field-effect transistor (CNTFET)
- Optimization algorithm
- Nondominated sorting based genetic algorithm II (NSGA-II)
- Gate diffusion input (GDI)
- Approximate computing