Skip to main content
Log in

New Technique: A low drift current reference based on PMOS temperature correction technology

  • Published:
Journal of Zhejiang University SCIENCE C Aims and scope Submit manuscript

Abstract

A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10−6/°C over the temperature range of −40–120 °C under the typical condition.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  • Babu, V.S., Haseena, P.S., Baiju, M.R., 2010. A Floating Gate MOSFET Based Current Reference with Subtraction Technique. IEEE Computer Society Annual Symp. on VLSI, p.206–209. [doi:10.1109/ISVLSI.2010.52]

  • Behzad, R., 2005. Design of Analog CMOS Integrated Circuits. Tsinghua University Press, Beijing, China, p.313–314 (in Chinese).

    Google Scholar 

  • Chun, H., Lehmann, T., 2010. CMOS Current Reference Generator Using Integrated Resistors. Int. Conf. on Electronics and Information Engineering, p.290–294. [doi:10. 1109/ICEIE.2010.5559872]

  • Khan, Q.A., Wadhwa, S.K., Misri, K., 2003. A Low Voltage Switched-Capacitor Current Reference Circuit with Low Dependence on Process, Voltage and Temperature. Proc. 16th Int. Conf. on VLSI Design, p.504–506. [doi:10.1109/ICVD.2003.1183184]

  • Osaki, Y., Hirose, T., Kuroki, N., Numa, M., 2010. Nano-Ampere CMOS Current Reference with Little Temperature Dependence Using Small Offset Voltage. 53rd IEEE Int. Midwest Symp. on Circuits and Systems, p.668–671.

  • Serrano, G., Hasler, P., 2008. A precision low-TC wide-range CMOS current reference. IEEE J. Sol.-State Circ., 43(2): 558–565. [doi:10.1109/JSSC.2007.914336]

    Article  Google Scholar 

  • Yang, B.D., Shin, Y.K., Lee, J.S., Lee, Y.K., Ryu, K.C., 2009. An Accurate Current Reference Using Temperature and Process Compensation Current Mirror. IEEE Asian Solid-State Circuits Conf., p.241–244. [doi:10.1109/ASSCC.2009.5357223]

  • Yang, W.B., Huang, Z.Y., Cheng, C.T., Lo, Y.L., 2011. Temperature Insensitive Current Reference for the 6.27 MHz Oscillator. 13th Int. Symp. on Integrated Circuits, p.559–562. [doi:10.1109/ISICir.2011.6131924]

  • Yoo, C., Park, J., 2007. CMOS current reference with supply and temperature compensation. Electron. Lett., 43(25): 1422–1424. [doi:10.1049/el:20072528]

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Le-nian He.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ye, Yd., He, Ln. & Shen, Yd. New Technique: A low drift current reference based on PMOS temperature correction technology. J. Zhejiang Univ. - Sci. C 13, 937–943 (2012). https://doi.org/10.1631/jzus.C1200112

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1631/jzus.C1200112

Key words

CLC number

Navigation