Abstract
A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the minimum temperature coefficient (TC), the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure, the upper PMOS, which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure, is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy, it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10−6/°C over the temperature range of −40–120 °C under the typical condition.
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Ye, Yd., He, Ln. & Shen, Yd. New Technique: A low drift current reference based on PMOS temperature correction technology. J. Zhejiang Univ. - Sci. C 13, 937–943 (2012). https://doi.org/10.1631/jzus.C1200112
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DOI: https://doi.org/10.1631/jzus.C1200112