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Analysis of yield loss due to random photolithographic defects in the interconnect structure of FPGAs

Published: 20 February 2005 Publication History

Abstract

This paper presents an analysis of the potential yield loss in FPGA due to random defects in metal layers. A proven yield model is adapted to target the FPGA interconnect layers in order to predict the manufacturing yield. Defect parameters from the 2003 SIA roadmap are used to investigate the trend in yield loss due to defects in interconnect layers in the future. It is shown that the low yield predicted for the 45nm technology node and beyond is a cause for concern. The potential impact on yield using two different approaches, namely redundant circuits and fault tolerant design, is also presented.

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      cover image ACM Conferences
      FPGA '05: Proceedings of the 2005 ACM/SIGDA 13th international symposium on Field-programmable gate arrays
      February 2005
      288 pages
      ISBN:1595930299
      DOI:10.1145/1046192
      Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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      Published: 20 February 2005

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      Author Tags

      1. FPGA interconnect
      2. FPGA redundancy
      3. catastrophic faults
      4. fault tolerance
      5. interconnect faults
      6. interconnect model
      7. yield enhancement
      8. yield prediction

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      • (2023)T-ray Wavelength Decoupled Imaging and Profile Mapping of a Whole Wafer for Die Sorting and AnalysisSensors10.3390/s2307366323:7(3663)Online publication date: 31-Mar-2023
      • (2023)Built-In Self-Test of High-Density and Realistic ILV Layouts in Monolithic 3-D ICsIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2022.322885031:3(296-309)Online publication date: Mar-2023
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