A. Fijany
ABSTRACT
The G4-FET, a four-gate transistor compatible with standard silicon-on-insulator (SOI) CMOS technology, provides unique opportunities as a logic device. Combining both JFET- and MOSFET-like actions within one transistor body, the G4-FET offers two side (lateral) junction-based gates, a top MOS gate, and a MOS back gate that is activated by SOI substrate biasing. The G4-FET's conduction characteristics are controlled by the combined interaction of these four gates. In this paper, the G4-FET is demonstrated as a logic device, resulting in a universal and programmable logic gate that can lead to the design of more efficient logic circuits. As an example, we present a new full adder design based on the G4-FET that is significantly more efficient than conventional designs.
- B. J. Blalock, S. Cristoloveanu, B. M. Dufrene, F. Allibert, and M. M. Mojarradi, The Multiple-Gate MOS-JFET Transistor, Int. J. of High Speed Electronics and Systems, 12, 2 (2002), 511--520.Google Scholar
Cross Ref
- S. Cristoloveanu, B. Blalock, F. Allibert, B.M. Dufrene, and M.M. Mojarradi, The Four-Gate Transistor, Proceedings of the 2002 European Solid-State Device Research Conf (Firenze, Italy, September 2002). 2002, 323--326.Google ScholarCross Ref
- B. Dufrene, K. Akarvardar, S. Cristoloveanu, B. J. Blalock, P. Gentil, E. Kolawa, M. M. Mojarradi, Investigation of the Four Gate Action in G4-FETs, IEEE Trans. on Electron Devices, 51, 11 (Nov. 2004), 1931--1935.Google ScholarCross Ref
Index Terms
- The G4-FET: a universal and programmable logic gate
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