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Synthesis of a wideband low noise amplifier

Published: 30 April 2006 Publication History

Abstract

Two generations of a wideband low noise amplifier (LNA) employing noise canceling principle have been synthesized. Thefirst generation design was fabricated in a 0.35 μm SiGe BiCMOS process. It has a measured peak S21 of 17 dB and noise figure less than 3 dB over a bandwidth of 2.6 GHz while consuming 32.5 mW of power from a 2.5 V supply. The calculated figure of merit (FOM) is better than many reported wideband LNAs, including a few from even more advanced processes. The synthesis design constraints were improved based on the analysis of the first gener-ation design. A second generation design was synthesized with the updated constraints. Its simulation results show that its FOM is better than its predecessor.

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  • (2007)Design and simulation of high gain PHEMT low noise amplifier (LNA)2007 International Conference on Computer Engineering & Systems10.1109/ICCES.2007.4447056(253-257)Online publication date: Nov-2007

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    cover image ACM Conferences
    GLSVLSI '06: Proceedings of the 16th ACM Great Lakes symposium on VLSI
    April 2006
    450 pages
    ISBN:1595933476
    DOI:10.1145/1127908
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    Published: 30 April 2006

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    Author Tags

    1. RFIC
    2. Wideband LNA
    3. synthesis

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    • (2007)Design and simulation of high gain PHEMT low noise amplifier (LNA)2007 International Conference on Computer Engineering & Systems10.1109/ICCES.2007.4447056(253-257)Online publication date: Nov-2007

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