ABSTRACT
Aggressive scaling of technology has an adverse impact on the reliability of VLSI circuits. Apart from increasing transient error susceptibility, the circuits also become more vulnerable to permanent damage and failures due to different physical phenomenon. Such concerns have been recently demonstrated for regular micro-architectures. In this work we demonstrate the vulnerability of Field Programmable Gate Arrays (FPGA)s to two different types of hard errors, namely, Time Dependent Dielectric Breakdown (TDDB) and Electro-migration. We also analyze the performance degradation of FPGAs over time caused by Hot Carrier Effects (HCE). We also propose three novel techniques to counter such aging based failures and increase the lifetime of the device.
- P. K. Samudrala, J. Ramos, and S. Katkoori "Selective Triple Modular Redundancy for SEU Mitigation in FPGAs" In Proceedings of Military and Aerospace Applications of Programmable Logic and Devices (MAPLD), 2003.Google Scholar
- S. Mahapatra, V. R. Rao, B. Cheng, M. Khare, C. D. Parikh, J. C. S. Woo and J. M. Vasi. "Performance and hot-carrier reliability of 100 nm channel lengthjet vapor deposited Si3N4 MNSFETs" IEEE Transactions on Electron Devices, vol.48, (no.4), April 2001. p.679--84.Google Scholar
- E. Rosenbaum, P. M. Lee, R. Moazzami, P. K. Ko and C. Hu "Circuit reliability simulator - oxide breakdown module" International Electron Devices Manufacturing Technology Digest, p. 331, 1989.Google ScholarCross Ref
- J. H. Stathis "Reliability limits for the Gate Insulator in CMOS Technology" In IBM journal of R&D, Vol. 46, 2002. Google ScholarDigital Library
- S. M. Alam, C. L. Gan, D. E. Troxel, and C. V. Thompson "Circuit-Level Reliability Analysis of Cu Interconnects" In Proceedings of International Symposium on Quality Electronics Design(ISQED) , 2004. Google ScholarDigital Library
- J. Srinivasan, S. V. Adve, P. Bose and J. A. Rivers, "The Impact of Technology Scaling on Lifetime Reliability" In Proceedings of International Conference on Dependable Systems and Networks(DSN), 2004. Google ScholarDigital Library
- X. Xuan, A. Chatterjee, and A. D. Singh "Local Redesign for Reliability of CMOS Digital Circuits Under Device Degradation" In proceedings of International Reliability Physics Symposium(IRPS), 2004.Google Scholar
- F. N. Najm "Transition density, a stochastic measure of activity in digital circuits" In Proceedings of Annual ACM IEEE Design Automation Conference, 1991. Google ScholarDigital Library
- "www.xilinx.com" Xilinx product datasheet for Virtex-II.Google Scholar
- J. H. Anderson, F. Najm, and T. Tuan. "Active leakage power optimization for FPGAs," In Proceedings of ACM/SIGDA International Symposium on Field-programmable gate arrays, 2004. Google ScholarDigital Library
- "Critical Reliability Challenges for the International Technology Roadmap for Semiconductors" In International Sematech Technology transfer 03024377A-TR, 2003.Google Scholar
- S. Srinivasan, A. Gayasen, N. VijayKrishnan and T. Tuan "Leakage control in FPGA routing fabric" In Proceedings of Asia-Pacific Design Automation Conference (ASPDAC) , 2005. Google ScholarDigital Library
- E. Keller "JRoute: A Run-Time Routing API for FPGA Hardware." In Proceedings of Seventh Reconfigurable Architectures Workshop (RAW) , 2000. Google ScholarDigital Library
- "BPTM 65nm: Berkeley Predictive Technology Model."Google Scholar
- V. Betz and J. Rose "VPR: A new packing, placement and routing tool for FPGA research" In Proceedings of the 7th International Workshop on Field-Programmable Logic and Applications, 1997. Google ScholarDigital Library
- Y. S. Jean and C. Y. Wu "The threshold-voltage model of MOSFET devices with localized interface charge" In Proceedings of IEEE Transactions on Electron Devices, 1997.Google Scholar
Index Terms
- FLAW: FPGA lifetime awareness
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