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Yield improvement and power aware low cost memory chips

Published:05 May 2008Publication History

ABSTRACT

Memories are among the densest integrated circuits that can be fabricated and therefore, have the highest rate of defects. This paper discusses an efficient technique for designing low cost high defect tolerant RAM chips. A 25% improvement in the yield is presented. The paper proposes a scheme that selects the right redundancy in memory designs driven by the fabrication cost and the yield. The new memory chip design technique fills the gap between the existing all-or-none extremes with memories. The area is sacrificed for these performance improvements, for significant power savings as well as for the significant improvement in the yield.

References

  1. http://www.public.itrs.orgGoogle ScholarGoogle Scholar
  2. Bertozzi et al., "Error control schemes for on-chip communication links: the energy-reliability tradeoffs", IEEE TCAD, Vol.24, No.6, 2005 Google ScholarGoogle ScholarDigital LibraryDigital Library
  3. Mitra et al., "Robust System Design with Built-In Soft-Error Resilience", IEEE computer society Vol.38, No.2 pp43--52 , Feb.2005 Google ScholarGoogle ScholarDigital LibraryDigital Library
  4. Rossi, and C. Metra, "Error correcting strategy for high speed and density reliable flash memories", Journal of electronic Testing, Theory and applications, Vol.19, No.5, pp511-5-5-521, Nov.2003 Google ScholarGoogle ScholarDigital LibraryDigital Library
  5. Nicolaidis, "Time Redundancy Based Soft-Error Tolerance to Rescue Nanometer Technologies", IEEE VLSI Test Symposium, pp86, 1999 Google ScholarGoogle ScholarDigital LibraryDigital Library
  6. Itoh et al., "Trends in low-power RAM circuit technologies", IEEE Proc., Vol.83, pp524--543, April 1995Google ScholarGoogle ScholarCross RefCross Ref
  7. Itoh "Trends in megabit DRAM circuit design", IEEE J. solid State Circuits, Vol.25, pp778--789, June 1990Google ScholarGoogle ScholarCross RefCross Ref
  8. Kimura et al., "Power reduction in megabit DRAM's", IEEE J. Solid state circuits, Vol.21, pp381--389, June 1986Google ScholarGoogle ScholarCross RefCross Ref
  9. Bhattacharjee and D. K. Pradhan, "LPRAM A novel Low-Power High-Performance RAM design with testability and Scalability", IEEE TC, Vol.23, No.5, 2004 Google ScholarGoogle ScholarDigital LibraryDigital Library
  10. Margala and N.G. Durdle, "Noncomplementaty BiCMOS logic and CMOS logic styles for low-voltage operation- A comprehensive study", IEEE J. Solid state Circuits, Vol.33, pp1580--1585, Oct.1998Google ScholarGoogle ScholarCross RefCross Ref
  11. K. Bhavsar, "An algorithm for row-column self-repair of RAM's and its implementation in the Alpha 21 264", in Proc. Int. Test Conf., pp311--318, Sep.1999 Google ScholarGoogle ScholarDigital LibraryDigital Library
  12. Kim, Y. Zorian, G. Komoriya, H. Pham, F. P. Higgins, and J. L. Lewandowski, "Built in self repair for embedded high density SRAM", in Proc. Int. Test Conf., pp1112--1119, Oct.1998 Google ScholarGoogle ScholarDigital LibraryDigital Library
  13. K. Huang, Y. H. Shen, and F. Lombrardi, "New approaches for the repairs of memories with redundancy by row/column deletion for yield enhancement", IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst., Vol.9, No.3, pp323--328, Mar.1990Google ScholarGoogle ScholarDigital LibraryDigital Library
  14. Horiguchi, J. Etoh, M. Aoki, K. Itoh, and T. Matsumoto, "A flexible redundancy technique for high-density DRAM's", IEEE J. Solid-State Circuits, Vol.26, No.1, pp12--17, Jan.1991Google ScholarGoogle ScholarCross RefCross Ref
  15. Mazumder and Y. S. Jih, "A new built-in self-repair approach to VLSI memory yield enhancement by using neural-type circuits", IEEE Trans. Comput-Aided Des. Integr. Circuits Syst., Vol.12, No.1, pp24--36, Jan.1993Google ScholarGoogle Scholar
  16. C. Kim, D. S. Yi, J. Y. Park, and C. H. Cho, "A BISR (built-in selfrepair) circuit for embedded memory with multiple redundancies", in Proc. Int. Conf. VLSI CAD, pp602--605, Oct.1999Google ScholarGoogle Scholar
  17. -Y. Kuo andW. K. Fuchs, "Efficient spare allocation in reconfigurable arrays", IEEE Design Test, Vol.4, pp24--31, 1987 Google ScholarGoogle ScholarDigital LibraryDigital Library
  18. Day, "A fault-driven comprehensive redundancy a algorithm", IEEE Design Test Comput., Vol.2, No.3, pp35--44, June 1985 Google ScholarGoogle ScholarDigital LibraryDigital Library

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          cover image ACM Conferences
          WREFT '08: Proceedings of the 2008 workshop on Radiation effects and fault tolerance in nanometer technologies
          May 2008
          46 pages
          ISBN:9781605580920
          DOI:10.1145/1366224

          Copyright © 2008 ACM

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          Publication History

          • Published: 5 May 2008

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