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A 2.4GHz LNA in a 90-nm CMOS technology designed with ACM model

Authors:

José Luis HuertasAuthors Info & Claims

SBCCI '08: Proceedings of the 21st annual symposium on Integrated circuits and system design

Pages 70 - 75

https://doi.org/10.1145/1404371.1404398

Published: 01 September 2008 Publication History

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Abstract

As part of a Low-IF ZigBee receiver, a 2.4GHz differential common source low noise amplifier, implemented in a 90nm mixed/RF 7M CMOS process and designed in moderate inversion, is presented in this work. Design methodology and simulation results from Spectre-RF simulator are presented. With 2.5V supply voltage, the LNA achieves a noise figure of 2.5dB, an IIP3 of 1dB and gain higher than 10dB, with a current consumption of 12mA. The LNA area without pads is 720μm x 710μm.

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Kadu ATurkane SPable SKureshi A(2015)Implementation of a novel co-design of LVTSCR for effective ESD protection in ultra-deep submicron IC2015 International Conference on Industrial Instrumentation and Control (ICIC)10.1109/IIC.2015.7150588(39-42)Online publication date: May-2015
https://doi.org/10.1109/IIC.2015.7150588
Kushairi NSanusi RRahayu Y(2012)Performance analysis of parasitic effect on distributed spiral inductor for 0.15 μm GaAs pHEMT MMIC low noise amplifier2012 IEEE Asia-Pacific Conference on Applied Electromagnetics (APACE)10.1109/APACE.2012.6457694(359-362)Online publication date: Dec-2012
https://doi.org/10.1109/APACE.2012.6457694

Index Terms

A 2.4GHz LNA in a 90-nm CMOS technology designed with ACM model
1. Hardware
  1. Integrated circuits

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Published In

SBCCI '08: Proceedings of the 21st annual symposium on Integrated circuits and system design

September 2008

256 pages

ISBN:9781605582313

DOI:10.1145/1404371

General Chair:
Marcelo Lubaszewski
UFRGS, Brazil
,
Program Chairs:
Michel Renovell
LIRMM, France
,
Rajesh Gupta
UCSD, USA

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Association for Computing Machinery

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Published: 01 September 2008

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SBCCI08: 21st Symposium on Integrated Circuits and System Design

September 1 - 4, 2008

Gramado, Brazil

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Kadu ATurkane SPable SKureshi A(2015)Implementation of a novel co-design of LVTSCR for effective ESD protection in ultra-deep submicron IC2015 International Conference on Industrial Instrumentation and Control (ICIC)10.1109/IIC.2015.7150588(39-42)Online publication date: May-2015
https://doi.org/10.1109/IIC.2015.7150588
Kushairi NSanusi RRahayu Y(2012)Performance analysis of parasitic effect on distributed spiral inductor for 0.15 μm GaAs pHEMT MMIC low noise amplifier2012 IEEE Asia-Pacific Conference on Applied Electromagnetics (APACE)10.1109/APACE.2012.6457694(359-362)Online publication date: Dec-2012
https://doi.org/10.1109/APACE.2012.6457694

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Design of a low power LNA circuit with noise canceling approach in 90 nm CMOS process

8 Gbits/s inductorless transimpedance amplifier in 90 nm CMOS technology

A low-power and high-gain fully integrated CMOS LNA

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