T. C. Penn
ABSTRACT
Using three-aperture ferrite memory cells, a 512-word non-destructive readout memory has been operated with transistor drivers. Writing and reading are both achieved with bipolar two-pulse sequences, which are, respectively, ERASE, WRITE and SET, READ. Due to the inherently non-destructive manner in which the cells are operated, no regeneration cycle is necessary to restore information to interrogated cells. The necessary bipolar writing and reading pulse sequences are conveniently provided by a novel magnetic switch matrix, in which all rows and columns are driven in coincidence except those intersecting at the desired address. The resultant driving current at the desired address is the sum of all the transistor driver currents, or 2(n-1) times the individual transistor driver currents for an "n" square matrix.
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