Unifluxor: a permanent memory element

This paper describes a write-once-memory-code phase change memory (WOM-code PCM) architecture for next-generation non-volatile memory applications. Specifically, we address the long latency of the write operation in PCM—attributed to PCM SET—...

Phase Change Memory (PCM) is a promising DRAM replacement in embedded systems due to its attractive characteristics including low static power consumption and high density. However, long write latency is one of the major drawbacks in current PCM ...

Emerging resistive memory technologies, such as PCRAM and ReRAM, have been proposed as promising replacements for DRAM-based main memory, due to their better scalability, low standby power, and non-volatility. However, limited write endurance is a major ...