skip to main content
10.1145/1785481.1785547acmconferencesArticle/Chapter ViewAbstractPublication PagesglsvlsiConference Proceedingsconference-collections
research-article

Numerical queue solution of thermal noise-induced soft errors in subthreshold CMOS devices

Published: 16 May 2010 Publication History

Abstract

Power consumption requirements drive CMOS scaling to ever lower supply voltages, reducing the stability margin with respect to thermal noise and raising the probability for thermally-induced soft errors. Given the long time scale of noise-induced soft errors, conventional Monte Carlo simulations cannot be used to predict error rates and alternative approaches are needed. In this paper, the analysis of thermal fluctuations in a CMOS flip-flop is performed using a 2D queue that maps the available configurations for the flip-flop in terms of electron populations on the two inverters, with the two stable logic states at the opposite corners of the 2D matrix. Trial simulations for model systems show that the thermally-induced logic transitions involve only a limited number of states immediately above and below the main diagonal of the full 2D queue. We present a numerical solution based on variable precision arithmetic for a truncated 2D queue consisting of a variable number of near-diagonal states. It is shown that increasing the width of the near-diagonal queue, an accurate solution for the error rate is asymptotically obtained without the need to consider the full 2D queue. Our approach is used to calculate the mean time to failure of flip-flops built in a 45-nm fully-depleted silicon-on-insulator (FD-SOI) technology modeled in the subthreshold regime, including parasitics. As a predictive tool, the framework can be used to investigate the thermal stability of devices built in future technologies and as a measure of device reliability in VLSI design.

References

[1]
International Technology Roadmap for Semiconductors, http://public.itrs.net.
[2]
H. Iwai, "The future of CMOS downscaling," chapter in S. Luryi, J. M. Xu, and A. Zaslavsky, eds., Future Trends in Microelectronics: The Nano, the Giga, and the Ultra, New York: Wiley, 2004, pp. 26.
[3]
B. C. Paul, A. Raychowdhury and K. Roy, "Device optimization for ultra-low power digital sub-treshold operation," Proc. Int. Symp. Low Power Electronics Design, pp. 96--101, August 2004.
[4]
L. Chang, Y. Nakamura, R. K. Montoye, J. Sawada, A. K. Martin, K. Kinoshita, F. H. Gebara, K. B. Agarwal, D. J. Acharyya, W. Haensch, K. Hosokawa, D. Jamsek, "A 5.3 GHz 8T-SRAM with operation down to 0.41 V in 65 nm CMOS," Symp. VLSI Circuits Dig. Tech. Papers, 2007, pp.252--253.
[5]
S. Hanson, B. Zhai, M. Seok, B. Cline, K. Zhou, M. Singhal, M. Minuth, J. Olson, L. Nazhandali, T. Austin, D. Sylvester, D. Blaauw, "Exploring variability and performance in a sub-200-mV processor", IEEE Journal Solid--State Circuits, vol. 43, no. 4, pp. 881--891, April 2008.
[6]
D. Bol, R. Ambroise, D. Flandre, Jean-Didier Legat, "Interests and limitations of technology scaling for subthreshold logic", IEEE Trans. Very Large Scale Integr. (VLSI), vol. 17, no. 10, pp. 1508, October 2009.
[7]
F. C. Sabou, D. Kazazis, R. I. Bahar, J. Mundy, W. R. Patterson, A. Zaslavsky, "Markov chain analysis of thermally-induced soft errors in subthreshold nanoscale CMOS circuits", IEEE TDMR, vol. 9, no. 3, pp.494--503, September 2009.
[8]
B. Iniguez, L. F. Ferreira, B. Gentinne and D. Flandre, "A physically-based C8-continuous fully-depleted SOI MOSFET model for analog applications," IEEE Transactions Electron Devices, vol. 43, pp. 568--575, 1996.
[9]
H. Li, J. Mundy, W. Patterson, D. Kazazis, A. Zaslavsky, and R. I. Bahar, "Thermally-induced soft errors in nanoscale CMOS circuits," IEEE/ACM Int. Symp. Nanoscale Architectures, 2007.
[10]
C. S. Deo and D. J. Srolovitz, "First passage time Markov chain analysis of rare events for kinetic Monte Carlo: double kink nucleation during dislocation glide," Modelling and Simulation in Materials Science and Engineering, vol. 10, no. 5, pp. 581--596, 2002.
[11]
C. Fenouillet--Beranger, S. Denorme, B. Icard, F. Boeuf, J. Coignus, O. Faynot, L. Brevard, C. Buj, C. Soonekindt, J. Todeschini, J. C. Le-Denmat, N. Loubet, C. Gallon, P. Perreau, S. Manakli, B. Mmghetti, L. Pain, V. Arnal, A. Vandooren, D. Aime, L. Tosti, C. Savardi, F. Martin, T. Salvetat, S. Lhostis, C. Laviron, N. Auriac, T. Kormann, G. Chabanne, S. Gaillard, O. Belmont, E. Laffosse, D. Barge, A. Zauner, A. Tarnowka, K. Romanjec, H. Brut, A. Lagha, S. Bonnetier, F. Joly, N. Mayet, A. Cathignol, D. Galpin, D. Pop, R. Delsol, R. Pantel, F. Pionnier, G. Thomas, D. Bensahel, S. Deleombus, T. Skotnicki, H. Mmgam, "Fully-depleted SOI technology using high-k and single-metal gate for 32nm node LSTP applications featuring 0.179 u m2 6T-SRAM bitcell," IEDM Tech. Dig., pp. 267--270,Dec 2007.
[12]
Handbook of Mathematical Functions Edited by M. Abramowitz and I. A. Stegun, Dover Publications Inc, New York, pp. 997--1011, 1972.
[13]
A. van der Ziel, Noise: Sources, Characterization, Measurement, Prentice Hall, New York, 1970.
[14]
L. Nagel, "SPICE2: a Computer Program to Simulate Semiconductor Circuits," Memo ERL-M520, Dept. Elect. and Computer Science, University of California at Berkeley, 1975.

Cited By

View all
  • (2011)Full Two-Dimensional Markov Chain Analysis of Thermal Soft Errors in Subthreshold Nanoscale CMOS DevicesIEEE Transactions on Device and Materials Reliability10.1109/TDMR.2010.206910011:1(50-59)Online publication date: Mar-2011
  • (2010)Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS DevicesIEEE Transactions on Nuclear Science10.1109/TNS.2010.2068561Online publication date: Dec-2010

Index Terms

  1. Numerical queue solution of thermal noise-induced soft errors in subthreshold CMOS devices

        Recommendations

        Comments

        Information & Contributors

        Information

        Published In

        cover image ACM Conferences
        GLSVLSI '10: Proceedings of the 20th symposium on Great lakes symposium on VLSI
        May 2010
        502 pages
        ISBN:9781450300124
        DOI:10.1145/1785481
        Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

        Sponsors

        In-Cooperation

        • IEEE CEDA
        • IEEE CASS

        Publisher

        Association for Computing Machinery

        New York, NY, United States

        Publication History

        Published: 16 May 2010

        Permissions

        Request permissions for this article.

        Check for updates

        Author Tags

        1. CMOS logic devices
        2. Markov process
        3. laplace transform
        4. monte carlo method
        5. poisson distribution
        6. reliability

        Qualifiers

        • Research-article

        Conference

        GLSVLSI '10
        Sponsor:
        GLSVLSI '10: Great Lakes Symposium on VLSI 2010
        May 16 - 18, 2010
        Rhode Island, Providence, USA

        Acceptance Rates

        Overall Acceptance Rate 312 of 1,156 submissions, 27%

        Upcoming Conference

        GLSVLSI '25
        Great Lakes Symposium on VLSI 2025
        June 30 - July 2, 2025
        New Orleans , LA , USA

        Contributors

        Other Metrics

        Bibliometrics & Citations

        Bibliometrics

        Article Metrics

        • Downloads (Last 12 months)1
        • Downloads (Last 6 weeks)0
        Reflects downloads up to 27 Feb 2025

        Other Metrics

        Citations

        Cited By

        View all
        • (2011)Full Two-Dimensional Markov Chain Analysis of Thermal Soft Errors in Subthreshold Nanoscale CMOS DevicesIEEE Transactions on Device and Materials Reliability10.1109/TDMR.2010.206910011:1(50-59)Online publication date: Mar-2011
        • (2010)Two-Dimensional Markov Chain Analysis of Radiation-Induced Soft Errors in Subthreshold Nanoscale CMOS DevicesIEEE Transactions on Nuclear Science10.1109/TNS.2010.2068561Online publication date: Dec-2010

        View Options

        Login options

        View options

        PDF

        View or Download as a PDF file.

        PDF

        eReader

        View online with eReader.

        eReader

        Figures

        Tables

        Media

        Share

        Share

        Share this Publication link

        Share on social media