ABSTRACT
Double Dipole Lithography (DDL) uses a combination of X and Y dipole exposures to achieve extreme off-axis illumination for both vertical and horizontal orientations. DDL requires decomposition of a given layout into two set of patterns for the respective dipole exposures. In this work, we propose a frequency domain decomposition flow for DDL. Our experiments show that the proposed frequency domain method not only eliminates the inherent ambiguity of the spatial rule-based flows but it also produces contours that exhibit significantly improved pattern fidelity across lithographic dose and focus variation.
- N. Dongseok et al., "Patterning 220nm Pitch DRAM Patterns by using Double Mask Exposure", SPIE, vol. 4000, pp. 283--292, 2000.Google Scholar
- S. D. Hsu et al., "Dipole Decomposition Mask-Design for Full-Chip Implementation at the 100nm Technology Node and Beyond", SPIE, vol. 4691, pp. 476--490, 2002.Google Scholar
- S. D. Hsu et al., "65-nm Full-Chip Implementation using Double Dipole Lithography", SPIE, vol. 5040, pp. 215--231, 2003.Google Scholar
- M. Maenhoudt et al., "Double Patterning Scheme for Sub-0.25 k1 Single Damascene Structures at NA=0.75, λ=193nm", SPIE, vol. 5757, pp. 1508--1518, 2005.Google Scholar
- M. Dusa et al., "Pitch Doubling through Double Patterning Lithography Challenges in Integration and Litho Budgets", SPIE, vol. 6520, pp. 65200G, 2007.Google Scholar
- S. D. Hsu et al., "Double Exposure Technique for 45nm and Beyond", SPIE, vol. 5992, pp. 59921Q, 2005.Google Scholar
- M. Burkhardt et al., "Dark Field Double Dipole Lithography for Back-end-of-line Processes", SPIE, vol. 6520, pp. 65200K, 2007.Google Scholar
- S. D. Hsu et al., "Dark Field Double Dipole Lithography (DDL) for 45nm and Beyond", SPIE, vol. 6283, pp. 62830U, 2006.Google Scholar
- M. Eurlings et al., "Experimental Verification of a Model Based Decomposition Method for Double Dipole Lithography", SPIE, vol. 5377, pp. 1225--1236, 2004.Google ScholarCross Ref
- J. A. Torres, F. Schellenberg, and O. Toublan, "Model Assisted Double Dipole Decomposition", SPIE, vol. 4691, pp. 401--417, 2002.Google ScholarCross Ref
- S. V. Postnikov et al., "Assessment for Complementary Double Dipole Lithography for 45 nm and 32 nm Technologies", SPIE, vol. 5754, pp. 1478--1484, 2005.Google Scholar
- M. Burkhardt et al., "Overcoming the Challenges of 22-nm Node Patterning through Litho-Design Co-optimization", SPIE, vol. 7274, pp. 727404, 2009.Google Scholar
- Y. Borodovsky, W-H. Cheng, R. Schenker, and V. Singh, "Pixilated Phase Mask as Novel Lithography RET", SPIE, vol. 6924, pp. 69240E, 2008.Google Scholar
- Y. Granik, "Fast Pixel Based Mask Optimization for Inverse Lithography", J. Microlith., Microfab., Microsyst., vol. 5(4), pp. 043002, 2006.Google Scholar
- L. Liebmann et al., "Reducing DfM to Practice: the Lithography Manufacturability Assessor", SPIE, vol. 6156, pp. 61560K, 2005.Google Scholar
Index Terms
- Frequency domain decomposition of layouts for double dipole lithography
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