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In-situ characterization and extraction of SRAM variability

Published: 13 June 2010 Publication History

Abstract

Measurement and extraction of as fabricated SRAM cell variability is essential to process improvement and robust design. This is challenging in practice, due to the complexity in the test procedure and requisite numerical analysis. This work proposes a new singleended test procedure for SRAM cell write margin measurement. Moreover, an efficient decomposition method is developed to extract transistor threshold voltage (VTH) variations from the measurements, allowing accurate determination of SRAM cell stability. The entire approach is demonstrated in a 90nm test chip with 32K cells. The advantages of the proposed method include: (1) a single-ended SRAM test structure with no disturbance to SRAM operations; (2) a convenient test procedure that only requires quasistatic control of external voltages; and (3) a non-iterative method that extracts the VTH variation of each transistor from eight measurements. The new procedure enables accurate predictions of SRAM performance variability. As validated with 90nm data of write margin and data retention voltage, the prediction error from extracted VTH variations is < 4% at all corners.

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Cited By

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  • (2017)SNM analytical approach to robust subthreshold SRAM operation based on the 55nm DDC technology2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)10.1109/S3S.2017.8308741(1-2)Online publication date: Oct-2017
  • (2016)SRAM-Based Unique Chip Identifier TechniquesIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2015.244575124:4(1213-1222)Online publication date: 1-Apr-2016
  • (2011)Improved circuits for microchip identification using SRAM mismatch2011 IEEE Custom Integrated Circuits Conference (CICC)10.1109/CICC.2011.6055318(1-4)Online publication date: Sep-2011

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  1. In-situ characterization and extraction of SRAM variability

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      cover image ACM Conferences
      DAC '10: Proceedings of the 47th Design Automation Conference
      June 2010
      1036 pages
      ISBN:9781450300025
      DOI:10.1145/1837274
      Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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      Publication History

      Published: 13 June 2010

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      Author Tags

      1. SRAM test
      2. data retention voltage
      3. extraction
      4. threshold voltage variation
      5. write margin

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      View all
      • (2017)SNM analytical approach to robust subthreshold SRAM operation based on the 55nm DDC technology2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)10.1109/S3S.2017.8308741(1-2)Online publication date: Oct-2017
      • (2016)SRAM-Based Unique Chip Identifier TechniquesIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2015.244575124:4(1213-1222)Online publication date: 1-Apr-2016
      • (2011)Improved circuits for microchip identification using SRAM mismatch2011 IEEE Custom Integrated Circuits Conference (CICC)10.1109/CICC.2011.6055318(1-4)Online publication date: Sep-2011

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