ABSTRACT
Magnetic Random Access Memory (MRAM) is a non-volatile memory which is widely studied for its high speed, high density, small cell size, and almost unlimited endurance. However, for deep-submicron process technologies, significant variation in MRAM cells' operating regions results in write failures in cells and reduces the production yield. Currently, memory designers characterize failed MRAM chips to find a suitable current level for reconfiguring their operating current, which is time-consuming. In this paper, we propose an efficient operating current search method and a built-in circuit for toggle MRAM, which can rapidly find a customized operating current for each MRAM chip. With the built-in circuit, an MRAM chip can dynamically reconfigure its operating current automatically. Production yield and product life-time thus can be increased.
- M. Durlam, Y. Chung, M. DeHerrera, B. N Engel, G. Grynkewich, B. Martino, B. Nguyen, J. Salter, P. Shah, and J. M. Slaughter, "MRAM Memory for Embedded and Stand Alone Systems", in Proc. IEEE Int'l Conf. on IC Design & Technology (ICICDT), pp. 1--4, May 2007.Google ScholarCross Ref
- M. Durlam, B. Craigo, M. DeHerrera, B. N. Engel, G. Grynkewich, B. Huang, J. Janesky, M. Martin, B. Martino, J. Salter, J. M. Slaughter, L. Wise, and S. Tehrani, "Toggle MRAM: A highly-reliable Non-Volatile Memory", in Proc. IEEE Int'l Symp. on VLSI Technology, Systems and Applications (VLSI-TSA), pp. 1--2, April 2007.Google ScholarCross Ref
- N. Sakimura, R. Nebashi, H. Honjo, S. Saito, Y. Kato, and T. Sugibayashi, "A 500-MHz MRAM Macro for High-performance SoCs", in Proc. IEEE Asian Solid-State Cir. Conf. (ASSCC), pp. 3--5, Nov. 2008.Google ScholarCross Ref
- J. M. Slaughter, "Recent Advances in MRAM Technology", in Proc. IEEE Device Research Conference (DRC), pp. 245--245, June 2007.Google Scholar
- D. C. Worledge, P. L. Trouilloud, M. C. Gaidis, Y. Lu, D. W. Abraham, S. Assefa, S. Brown, E. Galligan, S. Kanakasabapathy, J. Nowak, E. O'Sullivan, R. Robertazzi, G. Wright, and W. J. Gallagher, "Materials and devices for reduced switching field toggle magnetic random access memory", Jour. of Appl. Phys., Vol. 100, pp. 074506-074506-6, Oct. 2006.Google ScholarCross Ref
- S. Tehrani, "Status and Outlook of MRAM Memory Technology (Invited)", in Proc. IEEE Int'l Electron Devices Meeting (IEDM), pp. 1--4, Dec. 2006.Google Scholar
- C.-L. Su, R.-F. Huang, C.-W. Wu, C.-C. Hung, M.-J. Kao, Y.-J. Chang, and W.-C. Wu, "MRAM defect analysis and fault modeling", in Proc. Int'l Test Conf. (ITC), Charlotte, pp. 124--133, Oct. 2004. Google ScholarDigital Library
- C.-L. Su, C.-W. Tsai, C.-W. Wu, C.-C. Hung, Y.-S. Chen, and M.-J. Kao, "Testing MRAM for write disturbance fault", in Proc. Int'l Test Conf. (ITC), Santa Clara, Oct. 2006.Google Scholar
- C.-L. Su, C.-W. Tsai, C.-W. Wu, C.-C. Hung, Y.-S. Chen, D.-Y. Wang, Y.-J. Lee, and M.-J. Kao, "Write disturbance modeling and testing for MRAM", IEEE Trans. on VLSI Systems, vol. 16, no. 3, pp. 277--288, Mar. 2008 Google ScholarDigital Library
- K. Shimura, N. Ohshima, S. Miura, R. Nebashi, T. Suzuki, H. Hada, S. Tahara, H. Aikawa, T. Ueda, T. Kajiyama, and H. Yoda, "Magnetic and Writing Properties of Clad Lines Used in a Toggle MRAM", IEEE Trans. on Magnetic, vol. 42, pp. 2736--2738, Oct. 2006.Google ScholarCross Ref
- C.-C. Hung, Y.-J. Lee, M.-J. Kao, Y.-H. Wang, R.-F. Huang, W.-C. Chen, Y.-S. Chen, K.-H. Shen, and M.-J. Tsai, "Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme", Applied Physics Letters, vol. 88, pp. 112501-112501--3, Mar. 2006.Google ScholarCross Ref
- J. Akerman, P. Brown, M. DeHerrera, M. Durlam, E. Fuchs, D. Gajewski, M. Griswold, J. Janesky, J. Nahas and S. Tehrani, "Demonstrated reliability of 4-Mb MRAM", IEEE Trans. on Device and Materials Reliability, vol. 4, pp. 428--435, Sept. 2004.Google ScholarCross Ref
- D. C. Worledge, "Spin flop switching for magnetic random access memory", Applied Physics Letters, vol. 84, pp. 4559--4561, May 2004.Google ScholarCross Ref
- L.-T. Wang, C.-W. Wu, and X. Wen, Design for Testability: VLSI Test Principles and Architectures, San Francisco: Elsevier (Morgan Kaufmann), pp. 465--467, 2006. Google ScholarDigital Library
- C. Cheng, C.-T. Huang, J.-R Huang, C.-W. Wu, C.-J. Wey, and M.-C. Tsai, "BRAINS: A BIST Compiler for Embedded Memories", in Proc. IEEE Int'l Symp. on Defect and Fault Tolerance in VLSI Systems (DFTVS), pp. 299--307, Oct. 2000. Google ScholarDigital Library
- Agilent Technologies, Manual of the Agilent 93000 SOC series, System Reference, June 2004.Google Scholar
- T. Sugibayashi, N. Sakimura, T. Honda, K. Nagahara, K. Tsuji, H. Numata, S. Miura, K. Shimura, Y. Kato, S. Saito, Y. Fukumoto, H. Honjo, T. Suzuki, K. Suemitsu, T. Mukai, K. Mori, R. Nebashi, S. Fukami, N. Ohshima, H. Hada, N. Ishiwata, N. Kasai, and S. Tahara, "A 16-Mb Toggle MRAM With Burst Modes", IEEE Jour. of Solid-State Circuits (JSSC), vol. 42, pp. 2378--2385, Nov. 2007.Google ScholarCross Ref
Index Terms
- Fast identification of operating current for toggle MRAM by spiral search
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