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View all- Chen CWang SWu C(2013)Write Current Self-Configuration Scheme for MRAM Yield ImprovementIEEE Transactions on Very Large Scale Integration (VLSI) Systems10.1109/TVLSI.2012.220713621:7(1260-1270)Online publication date: 1-Jul-2013
Spin-transfer torque magnetic random access memory (STT-MRAM) is a novel, magnetic memory technology that leverages the base platform established by an existing 100+nm node memory product called MRAM to enable a scalable nonvolatile memory solution for ...
Emerging non-volatile memory technologies such as MRAM are promising design solutions for energy-efficient memory architecture, especially for mobile systems. However, building commodity MRAM by reusing DRAM designs is not straightforward. The existing ...
As one promising non-volatile memory technology, magnetoresistive RAM (MRAM) based on magnetic tunneling junctions (MTJs) has recently attracted much attention. However, latest device research has discovered that, in order to maintain sufficient MTJ ...
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