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Design of MRAM based logic circuits and its applications

Published: 02 May 2011 Publication History

Abstract

As the fabrication technology node shrinks down to 90nm or below, high standby power becomes one of the major critical issues for CMOS logic circuits due to the high leakage currents. A number of non-volatile storage technologies such as FRAM, MRAM, PCRAM and RRAM and so on, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy 3D integration after CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and their potential applications in the future.

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    cover image ACM Conferences
    GLSVLSI '11: Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI
    May 2011
    496 pages
    ISBN:9781450306676
    DOI:10.1145/1973009
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    Published: 02 May 2011

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    Author Tags

    1. 3d integration
    2. flip-flop
    3. fpga
    4. full-adder
    5. magnetic logic
    6. memory-in-logic
    7. mram
    8. non-volatile

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    May 2 - 4, 2011
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    • (2020)Hybrid Non-Volatile Flip-Flops Using Spin-Orbit-Torque (SOT) Magnetic Tunnel Junction Devices for High Integration and Low Energy Power-Gating ApplicationsElectronics10.3390/electronics90914069:9(1406)Online publication date: 1-Sep-2020
    • (2019)TridentFSSoftware—Practice & Experience10.1002/spe.229946:3(291-318)Online publication date: 4-Jan-2019
    • (2017)Area-efficient STT/CMOS non-volatile flip-flop2017 IEEE International Symposium on Circuits and Systems (ISCAS)10.1109/ISCAS.2017.8050697(1-4)Online publication date: May-2017
    • (2016)Radiation-Hardened Design of Nonvolatile MRAM-Based FPGAIEEE Transactions on Magnetics10.1109/TMAG.2016.257827852:10(1-10)Online publication date: Oct-2016
    • (2016)The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register2016 46th European Solid-State Device Research Conference (ESSDERC)10.1109/ESSDERC.2016.7599648(311-314)Online publication date: Sep-2016
    • (2016)CMOS-compatible spintronic devices: a reviewSemiconductor Science and Technology10.1088/0268-1242/31/11/11300631:11(113006)Online publication date: 14-Oct-2016
    • (2016)A Universal Nonvolatile Processing EnvironmentFuture Trends in Microelectronics10.1002/9781119069225.ch1-6(83-91)Online publication date: 19-Sep-2016
    • (2015)Soft Error-Tolerant Design of MRAM-Based Nonvolatile Latches for Sequential LogicsIEEE Transactions on Magnetics10.1109/TMAG.2014.237527351:6(1-14)Online publication date: Jun-2015
    • (2015)Comparative Analysis of MTJ/CMOS Hybrid Cells Based on TAS and In-Plane STT Magnetic Tunnel JunctionsIEEE Transactions on Magnetics10.1109/TMAG.2014.234700951:2(1-11)Online publication date: Feb-2015
    • (2015)Improving the performance of a non-volatile magnetic flip flop by exploiting the spin Hall effect2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)10.1109/SISPAD.2015.7292357(446-449)Online publication date: Sep-2015
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