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Impact of halo implantation on short channel effect in MOSFETs

Published: 25 February 2011 Publication History

Abstract

The normal short-channel effect of MOSFET's with halo implantation has been investigated. An Athena PLS diffusion model has been used to develop plot for various doses of Arsenic and Boron in PMOS structure using SILVACO. Various doses of both halo, arsenic and boron are changed to observe depletion depth and their resultant increase in threshold voltage in each cases.

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ICWET '11: Proceedings of the International Conference & Workshop on Emerging Trends in Technology
February 2011
1385 pages
ISBN:9781450304498
DOI:10.1145/1980022

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  • Thakur College Of Engg. & Tech: Thakur College Of Engineering & Technology

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Association for Computing Machinery

New York, NY, United States

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Published: 25 February 2011

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ICWET '11
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  • Thakur College Of Engg. & Tech

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