Zoya Dyka
ABSTRACT
In this paper, we describe a new non-volatile memory, based on metal-insulator-metal that provides performance benefits compared to standard Flash memory. In addition and more importantly, it comes with some advantages with respect to side channel attacks, i.e., its structure prevents by default optical analysis.
- S. P. Skorobogatov: Semi-invasive attacks - a new approach to hardware security analysis, Computer Laboratory, University of Cambridge, Technical report ACAM-cl-tr-630 , 2005Google Scholar
- Skorobogatov, S.: Flash memory 'Bumping' attacks. In: Mangard, S., Standaert, F.-X. (eds.) CHES 2010. LNCS, vol. 6225, pp. 158--172. Springer, Heidelberg (2010), http://www.springerlink.com/content/5777503941l561x1/ Google ScholarDigital Library
- S. Skorobogatov: Optical Fault Masking Attacks," Fault Diagnosis and Tolerance in Cryptography, FDTC 2010, pp. 23--29, 2010 Google ScholarDigital Library
- S. Skorobogatov: Local Heating Attacks on Flash Memory Devices, Hardware-Oriented Security and Trust (HOST-2009) Workshop, San Francisco, USA, 27 July 2009, http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=5225028&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D5225028 Google ScholarDigital Library
- Christophe De Nardi, Romain Desplats, Philippe Perdu, Félix Beaudoin, Jean Luc Gauffier: EEPROM Failure Analysis Methodology: Can Programmed Charges Be Measured Directly by Electrical Techniques of Scanning Probe Microscopy?, Proceedings of the 31 International Symposium for Testing and Failure Analysis November 6--10, 2005, McEnery Convention Center, San Jose, California, USAGoogle Scholar
- D. I. Konopinski, A. J. Kenyon: Data recovery from damaged electronic memory devices, Department of Electrical and Electronic Engineering, University College London, http://www.ee.ucl.ac.uk/lcs/previous/LCS2009/NEMS/Konopinski.pdfGoogle Scholar
- P.-S. Chen, H.-Y. Lee, Y.-S. Chen, P.-Y. Gu, F. Chen, and M.-J. Tsai, "Impact of engineered Ti layer on the memory performance of HfOx- based resistive memory," Electrochem. Solid State Lett., vol. 13, no. 12, pp. H423--H425, 2010.Google ScholarCross Ref
- C. Walczyk, D. Walczyk, T. Schroeder, T. Bertaud, M. Sowinska, M. Lukosius, M. Fraschke, D. Wolansky, B. Tillack, E. Miranda, and C. Wenger: "Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-based RRAM devices", IEEE Trans. Electron Devices, 58, 3124, 2011,Google ScholarCross Ref
- D. Walczyk, Ch. Walczyk, T. Schroeder, T. Bertaud, M. Sowinska, M. Lukosius, M. Fraschke, B. Tillack, Ch. Wenger: "Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells", Microelectronic Eng. 88, 1133, 2011, http://www.sciencedirect.com/science/article/pii/S0167931711003820 Google ScholarDigital Library
- D. Walczyk, T. Bertaud, M. Sowinska, M. Lukosius, M. A. Schubert, A. Fox, D. Wolansky, A. Scheit, M. Fraschke, G. Schoof, Ch. Wolf, R. Kraemer, B. Tillack, R. Korolevych, V. Stikanov, Ch. Wenger, T. Schroeder, and Ch. Walczyk: "Resistive switching behavior in TiN/ HfO2/Ti/TiN devices", to be presented at the 2012 ISCDGGoogle Scholar
Index Terms
- Side channel attacks and the non volatile memory of the future
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