Mohammad Yousef Zarei
ABSTRACT
Predicting MOSFET models plays a pivotal role in circuit design and its optimization. Independent Gate FinFETs (IGFinFET) are interesting for designers as they are more flexible than Common Multi-Gate FinFETs (CMGFinFET) in digital circuit design. In this work, we implement a model for symmetrical IGFinFET using CMGFinFET model based on Multi-Gate Predictive Technology Model (PTM-MG). This model has been developed from TCAD IGFinFET, based on previously published experimental results of CMG-FinFET. Different basic gates in SG (shorted gate), LP (low power), IG (low area), and IG/LP modes have been designed using the implemented model. For LP, IG, and IG/LP NAND gates, the leakage power is reduced by 89%, 26%, and 67%, respectively in comparison to SG. To show that our model does not have any convergence problem for large circuits, we used ISCAS'85 benchmark suite. The results show that for independent gate in high performance PTM-MG library, on average we can save up to 24% in the number of transistors and lower the total power by 42%.
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Index Terms
- Modeling symmetrical independent gate FinFET using predictive technology model
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