poster

Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell

Authors:

Ching-Te ChuangAuthors Info & Claims

ISLPED '14: Proceedings of the 2014 international symposium on Low power electronics and design

Pages 255 - 258

https://doi.org/10.1145/2627369.2627649

Published: 11 August 2014 Publication History

Abstract

In this work, we propose a mixed TFET-MOSFET 8T SRAM cell comprising MOSFET cross-coupled inverters, dedicated TFET read stack and TFET write access transistors. Exploiting both the merits of TFET and MOSFET devices, the proposed SRAM cell provides significant improvement in SRAM stability, V_min and performance. The proposed cell is evaluated and compared with the conventional MOSFET 8T cell and pure TFET 8T cell using mixed-mode TCAD simulations. The results indicate that the proposed mixed TFET-MOSFET cell topology is viable for ultra-low voltage operation.

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Cited By

Lu WWang CHu WDai CPeng CLin ZWu X(2025)Hybrid MOSFET-TFET 11T SRAM cell with high write speed and free half-selected disturbanceMicroelectronics Journal10.1016/j.mejo.2024.106498156(106498)Online publication date: Feb-2025
https://doi.org/10.1016/j.mejo.2024.106498
Abdel‐Hafeez SOtoom SQuwaider M(2022)Design of memory Alias Table based on the SRAM 8T‐CellInternational Journal of Circuit Theory and Applications10.1002/cta.328450:8(2913-2931)Online publication date: 9-Apr-2022
https://doi.org/10.1002/cta.3284
Tripathi S(2020)Low-Power High-Performance Tunnel FET With Analysis for IoT ApplicationsHandbook of Research on the Internet of Things Applications in Robotics and Automation10.4018/978-1-5225-9574-8.ch002(47-67)Online publication date: 2020
https://doi.org/10.4018/978-1-5225-9574-8.ch002
Show More Cited By

Index Terms

Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell
1. Hardware
  1. Emerging technologies
  2. Integrated circuits
    1. Semiconductor memory
      1. Static memory

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cover image ACM Conferences

ISLPED '14: Proceedings of the 2014 international symposium on Low power electronics and design

August 2014

398 pages

ISBN:9781450329750

DOI:10.1145/2627369

General Chairs:
Yuan Xie
UCSB, USA
,
Tanay Karnik
Intel, USA
,
Program Chairs:
Muhammad M. Khellah
Intel, USA
,
Renu Mehra
Synopsys, USA

Copyright © 2014 ACM.

Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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Published: 11 August 2014

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ISLPED'14: International Symposium on Low Power Electronics and Design

August 11 - 13, 2014

California, La Jolla, USA

Acceptance Rates

ISLPED '14 Paper Acceptance Rate 63 of 184 submissions, 34%;

Overall Acceptance Rate 398 of 1,159 submissions, 34%

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Cited By

Lu WWang CHu WDai CPeng CLin ZWu X(2025)Hybrid MOSFET-TFET 11T SRAM cell with high write speed and free half-selected disturbanceMicroelectronics Journal10.1016/j.mejo.2024.106498156(106498)Online publication date: Feb-2025
https://doi.org/10.1016/j.mejo.2024.106498
Abdel‐Hafeez SOtoom SQuwaider M(2022)Design of memory Alias Table based on the SRAM 8T‐CellInternational Journal of Circuit Theory and Applications10.1002/cta.328450:8(2913-2931)Online publication date: 9-Apr-2022
https://doi.org/10.1002/cta.3284
Tripathi S(2020)Low-Power High-Performance Tunnel FET With Analysis for IoT ApplicationsHandbook of Research on the Internet of Things Applications in Robotics and Automation10.4018/978-1-5225-9574-8.ch002(47-67)Online publication date: 2020
https://doi.org/10.4018/978-1-5225-9574-8.ch002
Lin ZChen PYe LYan XDong LZhang SYang ZPeng CWu XChen J(2020)Challenges and Solutions of the TFET Circuit DesignIEEE Transactions on Circuits and Systems I: Regular Papers10.1109/TCSI.2020.3010803(1-14)Online publication date: 2020
https://doi.org/10.1109/TCSI.2020.3010803
Hung JWang PLo YYang CTsui BYang C(2020)Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy ElectronicsIEEE Journal on Exploratory Solid-State Computational Devices and Circuits10.1109/JXCDC.2020.30329036:2(130-137)Online publication date: Dec-2020
https://doi.org/10.1109/JXCDC.2020.3032903
Patnala MYadav AWilliams JGopinath ANutter BYtterdal TRizkalla M(2019)Low Power-High Speed Performance of 8T Static RAM Cell within GaN TFET, FinFET, and GNRFET Technologies -- A ReviewSolid-State Electronics10.1016/j.sse.2019.107665(107665)Online publication date: Oct-2019
https://doi.org/10.1016/j.sse.2019.107665
Ahmad SAlam NHasan M(2018)Robust TFET SRAM cell for ultra-low power IoT applicationsAEU - International Journal of Electronics and Communications10.1016/j.aeue.2018.03.02989(70-76)Online publication date: May-2018
https://doi.org/10.1016/j.aeue.2018.03.029
Ansari MAhish SSharma DVasantha MKumar Y(2016)Performance analysis of a novel hetero-junction tunnel FET based SRAM at 0.3V supply voltage2016 IEEE Students’ Technology Symposium (TechSym)10.1109/TechSym.2016.7872686(224-228)Online publication date: Sep-2016
https://doi.org/10.1109/TechSym.2016.7872686
Wang JChen YSu PChuang C(2016)Exploration and evaluation of hybrid TFET-MOSFET monolithic 3D SRAMs considering interlayer coupling2016 International Conference on IC Design and Technology (ICICDT)10.1109/ICICDT.2016.7542057(1-4)Online publication date: Jun-2016
https://doi.org/10.1109/ICICDT.2016.7542057
Chen YFan MHu VSu PChuang C(2014)Evaluation of Stability, Performance of Ultra-Low Voltage MOSFET, TFET, and Mixed TFET-MOSFET SRAM Cell With Write-Assist CircuitsIEEE Journal on Emerging and Selected Topics in Circuits and Systems10.1109/JETCAS.2014.23610724:4(389-399)Online publication date: Dec-2014
https://doi.org/10.1109/JETCAS.2014.2361072

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