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A Ternary Content Addressable Cell Using a Single Phase Change Memory (PCM)

Published: 20 May 2015 Publication History

Abstract

This paper presents the novel design of a Ternary Content Addressable Memory (TCAM); different from existing designs found in the technical literature, this cell utilizes a single Phase Change Memory (PCM) as storage element and ambipolarity for comparison. A memory core consisting of a CMOS transistor and a PCM is employed (1T1P); for the search operation, the data in the 1T1P memory core is read and its value is established using two differential sense amplifiers. Compared with other non-volatile memory cells using emerging technologies (such as PCM-based, and memristor-based), simulation results show that the proposed non-volatile TCAM cell offer significant advantages in terms of power dissipation, PDP for the search operation, write time and reduced circuit complexity (in terms of lower counts in transistors and storage elements).

References

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Cited By

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  • (2022)Towards Energy Efficient Memristor-based TCAM for Match-Action Processing2022 IEEE 13th International Green and Sustainable Computing Conference (IGSC)10.1109/IGSC55832.2022.9969354(1-4)Online publication date: 24-Oct-2022
  • (2022) TCAmM CogniGron : Energy Efficient Memristor-Based TCAM for Match-Action Processing 2022 IEEE International Conference on Rebooting Computing (ICRC)10.1109/ICRC57508.2022.00013(89-99)Online publication date: Dec-2022
  • (2020)SIMULATION OF CASCADED GATE-BASED TERNARY CONTENTADDRESSABLE MEMORYi-manager's Journal on Circuits and Systems10.26634/jcir.8.2.180878:2(29)Online publication date: 2020
  • Show More Cited By

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        cover image ACM Conferences
        GLSVLSI '15: Proceedings of the 25th edition on Great Lakes Symposium on VLSI
        May 2015
        418 pages
        ISBN:9781450334747
        DOI:10.1145/2742060
        Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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        Published: 20 May 2015

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        Author Tags

        1. ambipolar transistor
        2. emerging technology
        3. phase change memory (pcm)
        4. ternary content addressable memory (tcam)

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        May 20 - 22, 2015
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        GLSVLSI '15 Paper Acceptance Rate 41 of 148 submissions, 28%;
        Overall Acceptance Rate 312 of 1,156 submissions, 27%

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        Cited By

        View all
        • (2022)Towards Energy Efficient Memristor-based TCAM for Match-Action Processing2022 IEEE 13th International Green and Sustainable Computing Conference (IGSC)10.1109/IGSC55832.2022.9969354(1-4)Online publication date: 24-Oct-2022
        • (2022) TCAmM CogniGron : Energy Efficient Memristor-Based TCAM for Match-Action Processing 2022 IEEE International Conference on Rebooting Computing (ICRC)10.1109/ICRC57508.2022.00013(89-99)Online publication date: Dec-2022
        • (2020)SIMULATION OF CASCADED GATE-BASED TERNARY CONTENTADDRESSABLE MEMORYi-manager's Journal on Circuits and Systems10.26634/jcir.8.2.180878:2(29)Online publication date: 2020
        • (2018)A Fine-grained Integrated IP Lookup Engine for Multigigabit IP Processing2018 IEEE International Conference on Advanced Networks and Telecommunications Systems (ANTS)10.1109/ANTS.2018.8710130(1-6)Online publication date: Dec-2018
        • (2017)Integrated Optical Content Addressable Memories (CAM) and Optical Random Access Memories (RAM) for Ultra-Fast Address Look-Up OperationsApplied Sciences10.3390/app70707007:7(700)Online publication date: 7-Jul-2017
        • (2017)Design and Comparative Evaluation of a PCM-Based CAM (Content Addressable Memory) CellIEEE Transactions on Nanotechnology10.1109/TNANO.2017.264954716:2(359-363)Online publication date: 1-Mar-2017
        • (2016)A non-volatile low-power TCAM design using racetrack memories2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)10.1109/NANO.2016.7751329(525-528)Online publication date: Aug-2016

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