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A 25-dBm 1-GHz Power Amplifier Integrated in CMOS 180nm for Wireless Power Transferring

Published: 31 August 2015 Publication History

Abstract

This paper presents the design of a power amplifier integrated in a CMOS 180 nm technology, which is intended to drive an inductive link operating at 990 MHz. A class-D topology is employed to avoid the use of inductors. A design methodology is proposed to find the optimal transistor width, solving the trade-off between the ON-resistance and gate capacitance. The area occupied is 1.5mm2, most of it is used by the PADs and the wide interconnects. Post-layout simulations showed a power efficiency of 58% when delivering 25.1 dBm to the primary inductor of a wireless power transferring system.

References

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Fabian L. Cabrera and F. Rangel de Sousa, "Optimal Design of Energy Efficient Inductive Links for Powering Implanted Devices," in Biomedical Wireless Technologies, Networks, and Sensing Systems (BioWireleSS), 2014 IEEE Topical Conference on, Jan. 2014, pp. 1--3.
[2]
Lei Ding, J. Hur, A. Banerjee, R. Hezar, and B. Haroun, "A 25 dBm Outphasing Power Amplifier With Cross-Bridge Combiners," Solid-State Circuits, IEEE Journal of, vol. 50, no. 5, pp. 1107--1116, May 2015.
[3]
Changsik Yoo and Qiuting Huang, "A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-μm CMOS," Solid-State Circuits, IEEE Journal of, vol. 36, no. 5, pp. 823--830, May 2001.
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Zhisheng Li, G. Torfs, J. Bauwelinck, Xin Yin, J. Vandewege, C. Van Praet, P. Spiessens, H. Tubbax, and F. Stubbe, "A 2.45-GHz +20-dBm Fast Switching Class-E Power Amplifier With 43% PAE and a 18-dB-Wide Power Range in 0.18-μm CMOS," Circuits and Systems II: Express Briefs, IEEE Transactions on, vol. 59, no. 4, pp. 224--228, Apr. 2012.
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O. Lee, K. H. An, H. Kim, D. H. Lee, J. Han, K. S. Yang, C.-H. Lee, H. Kim, and J. Laskar, "Analysis and Design of Fully Integrated High-Power Parallel-Circuit Class-E CMOS Power Amplifiers," Circuits and Systems I: Regular Papers, IEEE Transactions on, vol. 57, no. 3, pp. 725--734, Mar. 2010.
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R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, "A 1.7-GHz 31dBm differential CMOS Class-E Power Amplifier with 58% PAE," in Custom Integrated Circuits Conference, 2007. CICC '07. IEEE, Sept. 2007, pp. 551--554.
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Ji-Seon Paek and Songcheol Hong, "A 29 dBm 70.7% PAE Injection-Locked CMOS Power Amplifier for PWM Digitized Polar Transmitter," Microwave and Wireless Components Letters, IEEE, vol. 20, no. 11, pp. 637--639, Nov. 2010.
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Fabian L. Cabrera and F. Rangel de Sousa, "Contactless Characterization of a CMOS Integrated LC Resonator for Wireless Power Transferring," Microwave and Wireless Components Letters, IEEE, vol. 25, no. 7, pp. 475--477, July 2015.

Cited By

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  • (2020)Exploring the Advantages of Single-Ended-Input CMOS Self-Biased AmplifiersIEEE Transactions on Circuits and Systems II: Express Briefs10.1109/TCSII.2019.291583167:3(410-414)Online publication date: Mar-2020
  • (2020)Test strategy for a 25-dBm 1-GHz CMOS power amplifier in a wireless power transfer contextInternational Journal of Electronics10.1080/00207217.2020.1794052108:3(426-441)Online publication date: 23-Jul-2020
  • (2017)A Bridged Contactless Measurement Technique for LC Tank Based Voltage-Controlled OscillatorJournal of Electronic Testing: Theory and Applications10.1007/s10836-017-5657-x33:2(261-266)Online publication date: 1-Apr-2017
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  1. A 25-dBm 1-GHz Power Amplifier Integrated in CMOS 180nm for Wireless Power Transferring

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    cover image ACM Conferences
    SBCCI '15: Proceedings of the 28th Symposium on Integrated Circuits and Systems Design
    August 2015
    279 pages
    ISBN:9781450337632
    DOI:10.1145/2800986
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    Publication History

    Published: 31 August 2015

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    Author Tags

    1. CMOS
    2. Class-D
    3. integrated circuits
    4. power amplifier
    5. power efficiency
    6. wireless power transfer

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    SBCCI '15: 28th Symposium on Integrated Circuits and Systems Design
    August 31 - September 4, 2015
    Salvador, Brazil

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    SBCCI '15 Paper Acceptance Rate 43 of 98 submissions, 44%;
    Overall Acceptance Rate 133 of 347 submissions, 38%

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    Cited By

    View all
    • (2020)Exploring the Advantages of Single-Ended-Input CMOS Self-Biased AmplifiersIEEE Transactions on Circuits and Systems II: Express Briefs10.1109/TCSII.2019.291583167:3(410-414)Online publication date: Mar-2020
    • (2020)Test strategy for a 25-dBm 1-GHz CMOS power amplifier in a wireless power transfer contextInternational Journal of Electronics10.1080/00207217.2020.1794052108:3(426-441)Online publication date: 23-Jul-2020
    • (2017)A Bridged Contactless Measurement Technique for LC Tank Based Voltage-Controlled OscillatorJournal of Electronic Testing: Theory and Applications10.1007/s10836-017-5657-x33:2(261-266)Online publication date: 1-Apr-2017
    • (2016)Integrated CMOS class-e power amplifier for self-sustaining wireless power transfer systemProceedings of the 29th Symposium on Integrated Circuits and Systems Design: Chip on the Mountains10.5555/3145862.3145869(1-6)Online publication date: 29-Aug-2016

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