research-article

Exploiting ferroelectric FETs for low-power non-volatile logic-in-memory circuits

Authors:

Ahmedullah Aziz,

Michael Niemier,

Xiaobo Sharon HuAuthors Info & Claims

2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)

Pages 1 - 8

https://doi.org/10.1145/2966986.2967037

Published: 07 November 2016 Publication History

Abstract

Numerous research efforts are targeting new devices that could continue performance scaling trends associated with Moore's Law and/or accomplish computational tasks with less energy. One such device is the ferroelectric FET (FeFET), which offers the potential to be scaled beyond the end of the silicon roadmap as predicted by ITRS. Furthermore, the I<inf>ds</inf> vs. V<inf>gs</inf> characteristics of FeFETs may allow a device to function as both a switch and a non-volatile storage element. We exploit this FeFET property to enable fine-grained logic-in-memory (LiM). We consider three different circuit design styles for FeFET-based LiM: complementary (differential), dynamic current mode, and dynamic logic. Our designs are compared with existing approaches for LiM (i.e., based on magnetic tunnel junctions (MTJs), CMOS, etc.) that afford the same circuit-level functionality. Assuming similar feature sizes, non-volatile FeFET-based LiM circuits are more efficient than functional equivalents based on MTJs when considering metrics such as propagation delay (2.9×, 6.8×) and dyanmic power (3.7×, 2.3×) (for 45 nm, 22 nm technology respectively). Compared to CMOS functional equivalents, FeFET designs still exhibit modest improvements in the aforementioned metrics while also offering non-volatility and reduced device count.

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Exploiting ferroelectric FETs for low-power non-volatile logic-in-memory circuits
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cover image Guide Proceedings

2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)

Nov 2016

946 pages

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IEEE Press

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Published: 07 November 2016

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Cho SKim SKang MBaik SJeon J(2024)Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory DevicesMicromachines10.3390/mi1504045015:4(450)Online publication date: 27-Mar-2024
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Shao MZhao RLiu HXu WGuo YHuang DYang YLi XShao WShen PLiu JWang KZheng JYan ZYan JLu TYang YRen T(2024)Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applicationsChip10.1016/j.chip.2024.100101(100101)Online publication date: Jun-2024
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