ABSTRACT
No abstract available.
Index Terms
- MEMS CAD beyond multi-million transistors (panel)
Recommendations
Junction Field Effect Transistors for Nanoelectronics
The gate leakage currents of MOSFETs increase exponentially with downward scaling, while the gate currents of enhancement-mode JFETs for complementary logic decrease with scaling. In principle, a crossover point could exist below which the JFET may be ...
A Predictor/CAD Model for Buried-Channel MOS Transistors
An analytical predictor/CAD model for a short-channel buried-channel MOSFET is reported. The proposed model can be used to predict the anomalous threshold voltage shift associated with the short-channel buried-channel MOSFET. The characteristic is shown ...
Comments