Khalifa Echchakhaoui
ABSTRACT
In this paper, a new broadband microwave microstrip power limiter is designed and validated. The power limiter is based on microstrip technology integrating Schottky diodes and PIN diodes. Schottky diodes are used as detector diodes in order to generate DC current needed to bias PIN diode. The power limiter is optimized and validated using ADS software from Agilent technologies. The first circuit uses two single Schottky diodes and one PIN diode. In order to improve and simplify the first circuit, the second circuit is obtained by using a common anode Schottky diode. The third circuit is obtained by cascading two limiter stages of the second circuit. Simulation of circuits shows a limiting rate between 18 and 24 dB with a threshold input power level of 0 dBm until a maximum input power level of 30 dBm.
- D. Shiffler, T. K. Statom, T. W. Hussey, O. Zhou, P. Mardahl, "High-power microwave source", in Modern Microwave and MillimeterWave Power Electronics, pp. 691--730, 2005,Wiley Interscience.Google Scholar
- Nikolai V. Drozdovski&Lioudmila M. Drozdovskaia "Microstrip and waveguide passive power limiters with simplified construction", Journal of Microwaves and Optoelectronics, Vol. 1, No. 5, December 1999.Google Scholar
- Leo G. Maloratsky, "Passive RF&Microwave integrated circuits", Newnes, 2004, Elsevier IncGoogle Scholar
- Echchakhaoui, K., Elhassane, A and Bennis, H. (2017), « Microwave Power Protectors: Attenuators and Limiters » In Handbook of Research on Advanced Trends in Microwave and Communication Engineering (pp. 1--617). Hershey, PA: IGI Global.Google Scholar
- K. Echchakhaoui, E. Abdelmounim, J. Zbitou, H. Bennis, N. Ababssi, M. Latrach, "New Design of a Broadband Microwave Zero Bias Power Limiter", International Journal of Computer, Electrical, Automation, Control and Information Engineering Vol:9, No:1, 2015.Google Scholar
- V. V. Volkov, V. P. Ivanova, Yu. S. Kuz'michev, Yu. V. Solov'ev, "Design and technology of monolithic GaAs p-i-n diode limiters for the millimeter wavelength range" TechnicalPhysicsLetter Vol. 31 No. 7, 2005.Google Scholar
- D. J. Seymour, D. D. Heston, and R. E. Lehmann "X-Band and Ka-Band monolithic GaAS PIN diode variable attenuation limiters" 1988 IEEE MTT-S Digest.Google Scholar
- N. Roberts, 'A Review of Solid-State radar receiver protection devices,' Microwave Journal, Vol. 34, No. 2, February 1991, pp. 121--125.Google Scholar
- Bahl I. J., "10W CW broadband balanced limiter/LNA fabricated using MSAG MESFET process", International Journal of RF and Microwave Computer-Aided Engineering, vol. 13, Issue 2, pp. 118--127, March 2003.Google ScholarCross Ref
- Sandeep Chaturvedi, G. Sai Saravanan, Mahadeva Bhat K., SangamBhalke "MESFET process based planar Schottky diode and its application to passive power limiters" 978-1-4799-2501-8/13/$31.00 ©2013 IEEE.Google Scholar
- Bera, S., Basak, K., Jain, V., Singh, R., and Garg, V.: 'Schottky diode based microwave limiter with adjustable threshold power level', Microw. Opt. Technol. Lett., 2010, 52, pp. 1671--1673.Google ScholarCross Ref
- Nikolai V. Drozdovski "Microwave passive power limiters based on MESFETs", Journal of Microwaves and Optoelectronics, Vol. 1, No. 2, April 1998.Google Scholar
- J. Zbitou and M. Latrach, S. Toutain "Wide band rectenna with high sensitivity detection" Proc. Of the 4th Int. conf. on Solar Power from Space- SPS'04, together with the 5th Int. Conf. on Wireless Power transmission- WPT 5,30 June-2 July 2004, Granada, Spain (ESA SP-567, December 2004).Google Scholar
- Data Sheet of Schottky diode HSMS-286x "Surface mount RF Schottky barrier diodes", Avago Technologies.Google Scholar
- Data Sheet "Surface Mount (SOT) PIN diode" Alpha Industries Technologies.Google Scholar
- David M. Pozar, "Microwave Engineering" 4TH edition, JohnWiley & Sons, IncGoogle Scholar
- Frickey, Dean. (1994). "Conversions Between S, Z, Y, h, ABCD, and T Parameters which are Valid for Complex Source and Load Impedances" Microwave Theory and Techniques, IEEE Transactions on. 42. 205--211.Google Scholar
- Raymond W. Waugh, "Designing Large-Signal Detectors for Handsets and Base Stations," Wireless Systems Design, Vol. 2, No. 7, July 1997, pp 42--48.Google Scholar
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