ABSTRACT
Organic thin-film transistors (OTFTs) are widely used in flexible circuits, such as flexible displays, sensor arrays, and radio frequency identification cards (RFIDs), because these technologies offer features such as better flexibility, lower cost, and easy manufacturability using low-temperature fabrication process. This paper develops a procedure that evaluates the performance of flexible displays. Due to their very nature, flexible displays experience significant mechanical strain/stress in the field due to the deformation caused during daily use. These deformations can impact device and circuit performance, potentially causing a loss in functionality. This paper first models the effects of extrinsic strain due to two fundamental deformations modes, bending and twisting. Next, this strain is translated to variations in device mobility, after which analytical models for error analysis in the flexible display are derived based on the rendered image values in each pixel of the display. Finally, two error correction approaches for flexible displays are proposed, based on voltage compensation and flexible clocking.
- [1]. , “A High-Performance Short-Channel Bottom-Contact OTFT and its Application to AM-TN-LCD,” IEEE Transactions on Electron Devices, vol. 52, no. 7, pp. 1519–1526, 2005.Google ScholarCross Ref
- [2]. , “World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT,” in Proc. SID Symposium, pp. 625–628, 2008.Google Scholar
- [3]. , “User-Interactive Electronic Skin for Instantaneous Pressure Visualization,” Nature Materials, vol. 12, no. 10, p. 899, 2013.Google ScholarCross Ref
- [4]. , Applications of Organic and Printed Electronics: A Technology-Enabled Revolution. New York, NY: Springer, 2013.Google Scholar
- [5]. , Ultra-Thin Chip Technology and Applications. New York, NY: Springer, 2010.Google ScholarDigital Library
- [6]. , “Flexible Hybrid Electronic Circuits and Systems,” IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 7, no. 1, pp. 27–37, 2017.Google ScholarCross Ref
- [7]. , “A Large-Area, Flexible Pressure Sensor Matrix with Organic Field-Effect Transistors for Artificial Skin Applications,” Proc. National Academy of Sciences of the United States of America, vol. 101, no. 27, pp. 9966–9970, 2004.Google Scholar
- [8]. , “A 1V Printed Organic DRAM Cell Based on Ion-Gel Gated Transistors with a Sub-10nW-per-Cell Refresh Power,” in Proc. IEEE Solid-State Circuits Conference, pp. 326–328, 2011.Google Scholar
- [9]. , “Organic Thin Film Transistors,” Materials Today, vol. 7, no. 9, pp. 20–27, 2004.Google ScholarCross Ref
- [10]. , “Organic Thin-Film Transistors,” Chemical Society Reviews, vol. 39, no. 7, pp. 2643–2666, 2010.Google ScholarCross Ref
- [11]. , “World-Largest (6.5) Flexible Full Color Top Emission AMOLED Display on Plastic Film and Its Bending Properties,” in Proc. SID Symposium, pp. 983–985, 2009.Google Scholar
- [12]. , “Mechanistic Considerations of Bending-Strain Effects within Organic Semiconductors on Polymer Dielectrics,” Advanced Functional Materials, vol. 22, no. 1, pp. 175–183, 2012.Google ScholarCross Ref
- [13]. , “Flexible AMOLED Displays with Bending Interactive Interface,” in Proc. SID Symposium, pp. 1048–1051, 2016.Google Scholar
- [14]. , “Strain Sensitivity and Transport Properties in Organic Field-Effect Transistors,” IEEE Electron Device Letters, vol. 33, no. 1, pp. 113–115, 2012.Google ScholarCross Ref
- [15]. , Handbook of Flexible Organic Electronics: Materials, Manufacturing and Applications, Cambridge, UK: Elsevier, 2015.Google Scholar
- [16]. , “Reliability of OTFTs on Flexible Substrate: Mechanical Stress Effect,” The European Physical Journal-Applied Physics, vol. 55, no. 2, pp. 23907–1-23907-5, 2011.Google ScholarCross Ref
- [17]. , “Submillimeter Radius Bendable Organic Field-Effect Transistors,” Journal of Non-Crystalline Solids, vol. 352, no. 9–20, pp. 1769–1773, 2006.Google Scholar
- [18]. , “An OTFT-Driven Rollable OLED Display,” Journal of the Society for Information Display, vol. 19, no. 4, pp. 316–322, 2011.Google ScholarCross Ref
- [19]. , “Soluble and Processable Regioregular Poly (3-hexylthiophene) for Thin Film Field-Effect Transistor Applications with High Mobility,” Applied Physics Letters, vol. 69, no. 26, pp. 4108–4110, 1996.Google ScholarCross Ref
- [20]. , Introduction to Thin Film Transistors: Physics and Technology of TFTs. Cham, Switzerland: Springer, 2013.Google Scholar
- [21]. , “Comprehensive Picture of p-Type Doping of P3HT with the Molecular Acceptor F4TCNQ,” Physical Review B, vol. 87, no. 11, p. 115209, 2013.Google ScholarCross Ref
- [22]. , “Piezoresistance Effect in Germanium and Silicon,” Physical Review, vol. 94, no. 1, p. 42, 1954.Google ScholarCross Ref
- [23]. , “Field-Effect Mobility of Amorphous Silicon Thin-Film Transistors Under Strain,” Journal of Non-Crystalline Solids, vol. 338, pp. 732–735, 2004.Google ScholarCross Ref
- [24].“Organic Process Design Kit.” http://opdk.umn.eduGoogle Scholar
- [25]. , “Image Quality Assessment: From Error Visibility to Structural Similarity,” IEEE Transactions on Image Processing, vol. 13, no. 4, pp. 600–612, 2004.Google ScholarDigital Library
- [26]. , “Rate Bounds on SSIM Index of Quantized Images,” IEEE Transactions on Image Processing, vol. 17, no. 9, pp. 1624–1639, 2008.Google ScholarDigital Library
- [27]. , “Pentacene-Based Low-Voltage Strain Sensors with PVP/Ta2O5 Hybrid Gate Dielectrics,” IEEE Transactions on Electron Devices, vol. 57, no. 2, pp. 391–396, 2010.Google ScholarCross Ref
- [28]. , Low Power VCO Design in CMOS. Berlin, Germany: Springer, 2006.Google Scholar
Index Terms
- Strain-Aware Performance Evaluation and Correction for OTFT-Based Flexible Displays
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