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Voltage-Controlled Magnetoelectric Memory Bit-cell Design With Assisted Body-bias in FD-SOI

Published: 13 May 2019 Publication History

Abstract

Voltage-controlled magnetic anisotropy (VCMA)-magnetic tunnel junction (MTJ) is incorporated into FD-SOI CMOS technology. The design space of 1 transistor-1 MTJ (1T-1M) bit-cell is explored through varied VCMA pulse duration/amplitude and scaling down transistor dimensions. The design point with 1.1 V VCMA pulse amplitude, 0.44 ns pulse duration and W/L = 400 nm/30 nm access transistor shows the ultra low write energy in VCMA-MTJ based bit-cell. It achieves a minimum 3.18 fJ/bit switching energy with 28-nm FD-SOI process. Access transistor sizing is studied, while the ultra low power implementation may lead to MTJ switching failure. Voltage assisted techniques for failure mitigation are proposed based on body-bias generator (BBG). The BBG not only provides VCMA pulse signal to control MTJ barrier, but also generates body-bias to boost the transistor performance. In the presence of forward body-bias (FBB) and increased VCMA pulse level, the proposed strategy is effective in switching failure compensation as well as writing delay improvement.

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  • (2024)Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectivesJournal of Applied Physics10.1063/5.0201648135:22Online publication date: 14-Jun-2024

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  1. Voltage-Controlled Magnetoelectric Memory Bit-cell Design With Assisted Body-bias in FD-SOI

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    cover image ACM Conferences
    GLSVLSI '19: Proceedings of the 2019 Great Lakes Symposium on VLSI
    May 2019
    562 pages
    ISBN:9781450362528
    DOI:10.1145/3299874
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    Published: 13 May 2019

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    Author Tags

    1. design boundary
    2. fd-soi
    3. ultra-low power
    4. vcma-mtj
    5. voltage assisted techniques

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    • National Science and Technology Major Project of China
    • Pilot School Reform Funding Program in Southeast University

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    GLSVLSI '19: Great Lakes Symposium on VLSI 2019
    May 9 - 11, 2019
    VA, Tysons Corner, USA

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    • (2024)Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectivesJournal of Applied Physics10.1063/5.0201648135:22Online publication date: 14-Jun-2024

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