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Enhance Algan/Gan Hemts Electrical Performance by Using Patterned Sapphire Substrate

Published: 13 April 2019 Publication History

Abstract

As the market for personal communications services, and fifth generation (5G) mobile systems coming closer to reality, high frequency and high power device, radio frequency (RF) and microwave power amplifiers are beginning to be the focus of attention. However, the material properties of the commercial silicon process have gradually failed to meet this demand. To find the substitute materials becomes important issue. AlGaN/GaN heterojunction own large critical electric field and high electron mobility because of wide bandgap and 2DEG. Therefore, we can apply it to manufacturing high-power and high-frequency device. Currently, GaN has great opportunity for replacing Si.
In this study, we primarily utilize patterned sapphire substrate (PSS) technology to epitaxy high-quality GaN by MOCVD and fabricate AlGaN/GaN HEMTs. We confirm that patterned sapphire substrate (PSS) technology indeed improve epitaxy quality by Raman analysis and EPD method. Moreover, we also design different etching depth to obtain different defect density material and find correlation between defect density and device performance. We successfully reduce etching pits density from 1.06x107(cm-2) to 2.52x106(cm-2) and FWHM of Raman spectrum from 2.34(cm-1) to 2.25(cm-1) by utilizing patterned sapphire substrate (PSS) technology. At the same time, we enhance the maximum drain current (IDS, max) from 308(mA/mm) to 469(mA/mm), reduce on-resistance (Ron) from 16.4(Ω-mm) to 5.6(Ω-mm), and increase transconductance from 73.8(mS/mm) to 115.3(mS/mm).

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    cover image ACM Other conferences
    ICECC '19: Proceedings of the 2019 2nd International Conference on Electronics, Communications and Control Engineering
    April 2019
    105 pages
    ISBN:9781450362634
    DOI:10.1145/3324033
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Published: 13 April 2019

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    Author Tags

    1. Defects
    2. Epitaxy
    3. Gallium nitride
    4. High electron mobility transistor
    5. Metalorganic chemical vapor deposition
    6. Patterned sapphire substrate

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