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Growth Mechanism of Gan Growing on Dome-Shaped Patterned-Sapphire Substrates

Published: 13 April 2019 Publication History

Abstract

An efficient method to modify the defect density of a gallium nitride (GaN) epi-wafer is proposed in this study. A patterned sapphire substrate (PSS) was used here acting as the medium for defect adjustment. The characteristics of yielded samples were analyzed by Raman scattering and etching pitch density (EPD) methods, which did show the improved crystal quality of GaN. In order to reveal the veiled mechanism of defect reduction, we had executed Raman scattering and X-ray diffraction (XRD) measurements on various samples with different growth time to verify the behavior of defects during epitaxy.
With knowing of the mechanism of defect reduction, further investigations can be designed. The performance of devices with fairly low defect density can be improved greatly. Even defect free region also be expected. It will improve the performance of electronic device and optoelectronic device. And we believe that not only feasible for GaN, but also for other III-V materials

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  1. Growth Mechanism of Gan Growing on Dome-Shaped Patterned-Sapphire Substrates

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    cover image ACM Other conferences
    ICECC '19: Proceedings of the 2019 2nd International Conference on Electronics, Communications and Control Engineering
    April 2019
    105 pages
    ISBN:9781450362634
    DOI:10.1145/3324033
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Published: 13 April 2019

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    Author Tags

    1. Growth mechanism
    2. X-ray diffraction(XRD)
    3. epitaxy
    4. etching pitch density (EPD)
    5. gallium nitride (GaN)
    6. patterned-sapphire substrates(PSS)

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