research-article

An innovative strategy to reduce die area of robust OTA by using iMTGSPICE and diamond layout style for MOSFETs

Authors:

José Roberto Banin Júnior,

Rodrigo Alves de Lima Moreto,

Gabriel Augusto da Silva,

Carlos Eduardo Thomaz,

Salvador Pinillos GimenezAuthors Info & Claims

SBCCI '19: Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design

Article No.: 22, Pages 1 - 6

https://doi.org/10.1145/3338852.3339865

Published: 26 August 2019 Publication History

Abstract

This paper describes a pioneering design and optimization methodology that provides a remarkable die area reduction of robust analog Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuits (ICs) by using a computational tool based on artificial intelligence (iMTGSPICE) and the Diamond layout style for MOSFETs. The validation of this innovative optimization strategy for analog CMOS ICs was made for an Operational Transconductance Amplifiers (OTA) by using 180 nm CMOS ICs technology. The main finding of this work reports a remarkable reduction of the total die area of a robust OTA around 30%, regarding the use of Diamond MOSFETs with alfa angles of 45° when compared to the one implemented with standard rectangular MOSFETs.

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Cited By

Barri DVacula PKotě VVacula MJakovenko JVoves J(2022)Precise Model of the Effective Threshold Voltage Changes in the DLS MOSFETs for Different Gate Angles Compared with Measured Data2022 International Conference on Applied Electronics (AE)10.1109/AE54730.2022.9920095(1-6)Online publication date: 6-Sep-2022
https://dl.acm.org/doi/10.1109/AE54730.2022.9920095

Index Terms

An innovative strategy to reduce die area of robust OTA by using iMTGSPICE and diamond layout style for MOSFETs
1. Hardware
  1. Very large scale integration design
    1. Analog and mixed-signal circuits
      1. Analog and mixed-signal circuit optimization

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Published In

cover image ACM Conferences

SBCCI '19: Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design

August 2019

204 pages

ISBN:9781450368445

DOI:10.1145/3338852

General Chair:
João Martino
USP, Brazil
,
Program Chairs:
Marcelo Lubaszewski
UFRGS, Brazil
,
Matteo Reorda
Politec. di Torino, Italy

Copyright © 2019 ACM.

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Published: 26 August 2019

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SBCCI '19: 32nd Symposium on Integrated Circuits and Systems Design

August 26 - 30, 2019

São Paulo, Brazil

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Overall Acceptance Rate 133 of 347 submissions, 38%

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Cited By

Barri DVacula PKotě VVacula MJakovenko JVoves J(2022)Precise Model of the Effective Threshold Voltage Changes in the DLS MOSFETs for Different Gate Angles Compared with Measured Data2022 International Conference on Applied Electronics (AE)10.1109/AE54730.2022.9920095(1-6)Online publication date: 6-Sep-2022
https://dl.acm.org/doi/10.1109/AE54730.2022.9920095

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